Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Silicon-loaded waveguide in sputter-deposited PZT-on-MgO platform for on-chip electro-optic applications

Highly Oriented PZT Platform for Polarization-Independent Photonic Integrated Circuit and Enhanced Efficiency Electro-Optic Modulation

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Sputter-deposited PZT-on-Silicon Optimization for C-band Electro-Optic Modulation

3-D poling and drive mechanism for high-speed PZT-on-SOI Electro-Optic modulator using remote Pt buffered growth

Cubic Phase MgxZn1−xO Thin Films for Optical Waveguides

Optical modulation and detection based on a PN junction embedded silicon waveguide

Electro-Optic Effect Induced by Thermal Poling in Sio2 Ridge Waveguides

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

Plasmonic electro-optic modulators on lead zirconate titanate platform

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Nanophotonic Pockels modulators on a silicon nitride platform

Plate-slot polymer waveguide modulator on silicon-on-insulator

Integrated silicon carbide electro-optic modulator

Enhanced Electro-Optical Effect in Silicon

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits