Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华
2009-01-01
Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
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