Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Hui Ma,Haotian Yang,Bo Tang,Maoliang Wei,Junying Li,Jianghong Wu,Peng Zhang,Chunlei Sun,Lan Li,Hongtao Lin
DOI: https://doi.org/10.3788/col202119.071301
IF: 2.56
2021-01-01
Chinese Optics Letters
Abstract:As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 μm waveband. The development of the 2 μm silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process.The designed micro-ring resonator with a 0.6 μm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 × 105. The propagation loss is calculated as 1.62 d B/cm. In addition,the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 μm with good performances.
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