Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Broadband Polarization-Independent Directional Coupler Using Asymmetric-Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Dispersion Engineering of Suspended Silicon Photonic Waveguides for Broadband Mid-Infrared Wavelength Conversion

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Si Photonic Wire Waveguide Devices

High-efficiency Suspended Three-Tip Edge Coupler for Mid-infrared Photonics

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Analysis of Polarization-independent Optical Directional Coupler Based on Slot Waveguides for Long-wave Infrared

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

Ultra-Compact Birefringence-Compensated Arrayed Waveguide Grating Triplexer Based on Silicon-On-Insulator

Development Status of Optical Waveguided Devices for Mid/Long-wave Infrared Region

Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

Quasi Phase Matching in Soi and Sos Based Parametric Wavelength Converters