Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Low Loss Broadband Waveguide Crossing for Silicon-on-Insulator Optical Interconnect

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Multi-stacked Silicon Wire Waveguides and Couplers Toward 3D Optical Interconnects

Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Ultra‐Low Loss SiN Edge Coupler for III‐V/SiN Hybrid Integration

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

High performance ultra-compact SOI waveguide crossing.

Tri-layer Gradient and Polarization-Selective Vertical Couplers for Interlayer Transition.

Compact and Low-Loss 1 × 3 Polarization-Insensitive Optical Power Splitter Using Cascaded Tapered Silicon Waveguides

Coupling $Si_3N_4$ waveguide to SOI waveguide using transformation optics

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

Broadband low loss and ultra-low crosstalk waveguide crossings based on multimode interferometer for 840 nm operation