Low Loss Broadband Waveguide Crossing for Silicon-on-Insulator Optical Interconnect

Wanyuan Liu,Xin Tu,Huixiao Ma,H.Y. Fu,Dongyu Geng

DOI: https://doi.org/10.1364/acpc.2014.ath3a.52

2014-01-01

Abstract:We demonstrated a waveguide crossing with an average simulation loss of 0.03 dB and a crosstalk of over 43.8 dB. It also exhibits a good performance process tolerance with 3D FDTD simulation.

What problem does this paper attempt to address?

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Lin Han,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1364/oe.451104

IF: 3.8

2022-01-01

Optics Express

Abstract:An ultralow-loss silicon planar waveguide crossing operating in the O-band was experimentally demonstrated based on the Gaussian beam synthesis method. Elliptical parabolic inverted tapers were introduced in our design to reduce the crossing loss. According to the measurement results, the proposed device exhibits an insertion loss of 0.008 dB, which is the lowest reported loss for planar silicon waveguide crossings operating in the O-band. The device exhibits a low crosstalk below -40 dB over a 40 nm wavelength range with a compact footprint of 18 × 18 µm2 and can be fabricated in a complementary metal-oxide-semiconductor-compatible process.
High performance ultra-compact SOI waveguide crossing.

Hai-Long Han,He Li,Xiao-Pei Zhang,Ang Liu,Tian-Ying Lin,Ze Chen,Hai-Bin Lv,Ming-Hui Lu,Xiao-Ping Liu,Yan-Feng Chen

DOI: https://doi.org/10.1364/OE.26.025602

IF: 3.8

2018-01-01

Optics Express

Abstract:Waveguide crossing is an important integrated photonic component that will be routinely used for high-density and large-scale photonic integrated circuits, such as optical switches and routers. Several techniques have been reported in achieving high performance waveguide crossings on a silicon-on-insulator photonic platform, i.e., low-loss and low-crosstalk waveguide crossings based on multimode interference, bi-layer tapering, optical transformation, metamaterials, and subwavelength gratings. Until recently, not much attention has been given to the reduction of the footprint of waveguide crossings. Here we experimentally demonstrate an ultra-compact waveguide crossing on silicon photonic platform with a footprint only similar to 1 x 1 mu m(2). Our simulations show that it has a low insertion loss (< 0.175 dB) and low crosstalk (< -37dB) across the whole C-band, while the fabricated one has an insertion loss < 0.28 dB and crosstalk around -30 dB for the C-band. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Demonstration of a highly efficient multimode interference based silicon waveguide crossing

Xianyao Li,Hao Xu,Xi Xiao,Zhiyong Li,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1016/j.optcom.2013.08.021

IF: 2.4

2014-01-01

Optics Communications

Abstract:We present the design, fabrication and characterization of a highly efficient silicon waveguide crossing based on multimode interference (MMI). The crossing is formed by only one step etching with the grating couplers on a silicon-on-insulator (SOI) platform. High transmission efficiency of 98.5% (loss of −0.07dB) and low crosstalk (<−43dB) are predicted by the 3D FDTD simulation. Our experiment results showed good agreement with the simulation and, loss of −0.1dB per crossing, and crosstalk better than −40dB was obtained over a broad optical spectrum from 1520nm to 1580nm. Such a low loss, low crosstalk waveguide crossing is suitable for future on-chip optical interconnect.
Compact and Low Cross-Talk Silicon-on-insulator Crossing Using a Periodic Dielectric Waveguide.

Junbo Feng,Qunqing Li,Shoushan Fan

DOI: https://doi.org/10.1364/ol.35.003904

IF: 3.6

2010-01-01

Optics Letters

Abstract:We propose and experimentally demonstrate a compact, highly efficient, and negligible cross-talk silicon-on-insulator crossing using a periodic dielectric waveguide. The crossing occupies a footprint of less than 4 mu m x 4 mu m. Around 0.7 dB insertion loss and lower than -40 dB, cross talk was achieved experimentally over a broad wavelength range. (C) 2010 Optical Society of America
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Robust TE0 + TE1 Waveguide Crossing

Pengfei Xu,Yanfeng Zhang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/cleopr.2018.w3a.118

2018-01-01

Abstract:We proposed a silicon waveguide crossing device supporting both TE0 and TEl modes, TE0 mode insertion loss about -1 ~ -1.2 dB and TE1 insertion loss about -0.5 ~ -1 dB, and the crosstalk is better than -30 dB.
Low-Loss Waveguide Crossing for Complicated On-Chip Microwave Photonic Processor

Ziyang Lu,Jiachen Li,Hongwei Chen,Sigang Yang,Minghua Chen

DOI: https://doi.org/10.1109/jphot.2024.3366937

IF: 2.4

2024-03-15

IEEE Photonics Journal

Abstract:To realize large device density and high complexity in future on-chip microwave photonic system, a waveguide crossing with low loss, crosstalk and reflection is designed on the silicon nitride waveguide platform, which is compatible for on-chip microwave photonic processor. Furthermore, a multi-channel microwave photonic signal processing chip is fabricated based on the proposed waveguide crossings, and the performance of the chip is evaluated. In simulation, the proposed waveguide crossing maintains an insertion loss of ∼0.08 dB per crossing in the wavelength range of 1500 nm – 1600 nm, while the experiment result is 0.086 dB per crossing. As the wavelength changes, the measured variation of insertion loss per crossing is less than 0.02 dB. The crossings on the signal processing chip induce an extra insertion loss of 1.2 dB to each channel. Meanwhile, the measured crosstalk and reflection are both below −44 dB. Furthermore, the proposed waveguide crossing shows significant robustness for fabrication. With the advantages of ultra-low loss, crosstalk and reflection, the proposed waveguide crossing may support the establishment for future complicated on-chip microwave photonic systems.

engineering, electrical & electronic,optics,physics, applied
Compact Silicon Photonic Waveguide Crossings with Sub- 10-Mdb Loss

Yingying Peng,Huan Li,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t4a.130

2021-01-01

Abstract:We have designed and experimentally demonstrated silicon photonic waveguide crossings for the TE fundamental mode with record-low loss of $6\pm 2\ \text{mdB}$ in the wavelength range of 1520–1560 nm.
Low-loss Silicon Rib Waveguide Crossing with Low Polarization Dependence Loss

Sailong Wu,Xin Mu,Lirong Cheng,Xin Tu,H. Y. Fu

DOI: https://doi.org/10.1364/fio.2019.jtu3a.70

2019-01-01

Abstract:A low-loss silicon rib waveguide crossing with low polarization dependence loss is proposed. The insertion loss for TE (TM) polarization mode is -0.14 dB (-0.29 dB) and the crosstalk is -28 dB (-30 dB) at 1550 nm. The footprint of this device is around 8×8 μm2.
Broadband low loss and ultra-low crosstalk waveguide crossings based on multimode interferometer for 840 nm operation

Stefan Nevlacsil,Paul Muellner,Martin Sagmeister,Jochen Kraft,Rainer Hainberger

DOI: https://doi.org/10.48550/arXiv.2002.11399

2020-02-26

Optics

Abstract:Broadband low loss and ultra-low crosstalk waveguide crossings are a crucial component for photonic integrated circuits to allow a higher integration density of functional components and an increased flexibility in the layout. We report the design of optimized silicon nitride waveguide crossings based on multimode interferometer structures for intersecting light paths of TE/TE-like, TM/TM-like and TE/TM-like polarized light in the near infrared wavelength region of 790 nm to 890 nm. The crossing design for diverse polarization modes facilitates dual polarization operation on a single chip. For all configurations the loss of a single crossing was measured to be 0.05 dB at 840 nm. Within the 100 nm bandwidth losses stayed below 0.16 dB. The crosstalk was estimated to be on the order of -60 dB by means of 3D finite difference time domain simulations.
Series of Ultra-Low Loss and Ultra-Compact Multichannel Silicon Waveguide Crossing

Zheng Peng,Junbo Feng,Te Du,Wei Cheng,Yan Wang,Shengyin Zang,Hao Cheng,Xiaodong Ren,Yubei Shuai,Hao Liu,Jiagui Wu,Junbo Yang

DOI: https://doi.org/10.1364/oe.462479

IF: 3.8

2022-01-01

Optics Express

Abstract:Ultra-compact waveguide crossing (UC-WC) is a basic component in optoelectronic fusion chip solutions, as its footprint is smaller in the orders of magnitude than that of traditional photonic integrated circuits (PICs). However, a large loss of UC-WC (decibel level) becomes a barrier to scaling and practicality. Here, we propose a series of ultra-low loss UC-WC silicon devices using an advanced hybrid design that combines the adjoint method with the direct binary search (DBS) algorithm. Simulation results show that our 2 x 2 UC-WC has an insertion loss as low as 0.04 dB at 1550 nm, which is about ten times lower than the previous UC-WC results. In the valuable C-band (1530-1565 nm), the insertion loss of UC-WC is lower than -0.05 dB, and the channel crosstalk is lower than -34 dB. Furthermore, for the 3 x 3 UC-WC device, the highest insertion loss in the entire C-band is approximately -0.07 dB, and the highest channel crosstalk is lower than -33 dB. Additionally, the 4 x 4 and more complex 8 x 8 UC-WC devices were also analyzed. The highest insertion loss for 4 x 4 and 8 x 8 UC-WC in the C-band is only -0.19 dB and -0.20 dB, respectively, and the highest channel crosstalk is approximately -22dB and -28 dB, respectively. These results confirm that the designed devices possess two attractive features simultaneously: ultra-compactness and ultra-low insertion loss, which may be of great value in future large-scale optoelectronic fusion chips. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Ultra-low-loss Inverted Taper Coupler for Silicon-on-insulator Ridge Waveguide

Minhao Pu,Liu,Haiyan Ou,Kresten Yvind,Jorn M. Hvam

DOI: https://doi.org/10.1016/j.optcom.2010.05.034

IF: 2.4

2010-01-01

Optics Communications

Abstract:An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering the width of the silicon-on-insulator waveguide from 450nm down to less than 15nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler for transverse-magnetic and transverse-electric modes are ∼0.36dB and ∼0.66dB per connection, respectively.
5×5 Μm2 Compact Waveguide Crossing Optimized by Genetic Algorithm

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Chunchuan Yang,Lin Liu,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2017.m2d.2

2017-01-01

Abstract:Waveguide crossing device is a fundamental building block for isolated propagation of two cross waveguides in silicon photonics. In this work, a genetic algorithm optimized compact silicon waveguide crossing of 5x5 mu m(2) for fundamental Transverse Electric (TE) mode is designed, fabricated, and tested. A measured insertion loss of 0.1-0.3 dB with a crosstalk of <-35 dB is achieved in such design scheme.
Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Defen Guo,Tao Chu

DOI: https://doi.org/10.1364/OL.43.004795

IF: 3.6

2018-01-01

Optics Letters

Abstract:We proposed and experimentally demonstrated a compact, broadband, and low-loss-mode-evolution-based 2 x 23 dB coupler on a silicon-on-insulator platform. The waveguide widths and separations of the coupler were tapered in an optimal manner using the shortcuts to the adiabaticity method. The coupler, with a similar to 70 mu m total length and 200 nm feature size, exhibited <0.3 dB measured excess loss over a broadband wavelength range from 1500 to 1600 nm. Balanced and unbalanced Mach-Zehnder interferometers fabricated for validation showed extinction ratios larger than 27 and 23 dB, respectively, over a 100 nm bandwidth. The extracted splitting ratio was between 0.48 and 0.52. (C) 2018 Optical Society of America
Ultra-compact high efficiency and low crosstalk optical interconnection structures based on inverse designed nanophotonic elements

Zikang Li,Guofeng Li,Jie Huang,Zhenrong Zhang,Junbo Yang,Changming Yang,Yang Qian,Wenjie Xu,Huimin Huang

DOI: https://doi.org/10.1038/s41598-020-68936-w

IF: 4.6

2020-07-20

Scientific Reports

Abstract:Abstract In this paper, we combine inverse design concept and direct binary search algorithm to demonstrate three ultra-compact high efficiency and low crosstalk on-chip integrated optical interconnection basic devices in the entire wavelength range of 1,400–1600 nm based on silicon-on-insulator platform. A 90-degree waveguide bend with a footprint of only 2.4 × 2.4 μm 2 is designed, whose transmission efficiency up to 0.18 dB. A waveguide crossing with a footprint of only 2.4 × 2.4 μm 2 is designed, which can provide insertion loss of less than 0.5 dB and crosstalk (CL) of lower than − 19 dB. A same direction waveguide crossing with footprint of only 2.4 × 3.6 μm 2 is designed, which can provide the insertion loss of less than 0.56 dB and the crosstalk of lower than − 21 dB. Then, we use them to form several ultra-compact optical interconnect basic structures and performed the simulation calculation. They overall achieve high performance. This will significantly improve the integration density.

multidisciplinary sciences
Four-mode Waveguide Crossing Via Digitized Meta-Structure

Yingjie Liu,Zhongqiu Zhong,Shuai Wang,Yilin Liu,Yong Yao,Jiangbing Du,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ofc.2021.f2b.3

2021-01-01

Abstract:A four-mode waveguide crossing with footprint of only 7.5×7.5 μm 2 is demonstrated on silicon photonic platform. The device insertion loss is less than 0.85 dB, and the crosstalk is below -18 dB for 1500-1580 nm.
Low-loss and low-cross talk polarization-insensitive multimode silicon waveguide crossing

Yun Chen,Pengjun Wang,Qiang Fu,Yuhan Sun,Yi Zou,Shixun Dai,Weiwei Chen,Haoqi Chen,Jun Li,Tingge Dai,Jianyi Yang

DOI: https://doi.org/10.1364/ol.537506

IF: 3.6

2024-08-28

Optics Letters

Abstract:Yun Chen, Pengjun Wang, Qiang Fu, Yuhan Sun, Yi Zou, Shixun Dai, Weiwei Chen, Haoqi Chen, Jun Li, Tingge Dai, Jianyi Yang A polarization-insensitive multimode silicon waveguide crossing is investigated and experimentally characterized in this Letter. By ... [Opt. Lett. 49, 4930-4933 (2024)]

optics
Inverse-designed Ultra-Compact High Efficiency and Low Crosstalk Optical Interconnect Based on Waveguide Crossing and Wavelength Demultiplexer

Yanhong Xu,Jie Huang,Lina Yang,Hansi Ma,Huan Yuan,Tong Xie,Junbo Yang,Zhenrong Zhang

DOI: https://doi.org/10.1038/s41598-021-92038-w

IF: 4.6

2021-01-01

Scientific Reports

Abstract:In this paper, we use the inverse design method to design an optical interconnection system composed of wavelength demultiplexer and the same direction waveguide crossing on silicon-on-insulator (SOI) platform. A 2.4 μm × 3.6 μm wavelength demultiplexer with an input wavelength of 1.3–1.6 μm is designed. When the target wavelength of the device is 1.4 μm, the insertion loss of the output port is − 0.93 dB, and there is − 18.4 dB crosstalk, in TE 0 mode. The insertion loss of the target wavelength of 1.6 μm in TE 0 mode is − 0.88 dB, and the crosstalk is − 19.1 dB. Then, we designed a same direction waveguide crossing, the footprint is only 2.4 μm × 3.6 μm, the insertion loss of the wavelength 1.4 μm and 1.6 μm in TE 0 mode is − 0.99 dB and − 1 dB, and the crosstalk is − 12.14 dB and − 14.34 dB, respectively. Finally, an optical interconnect structure composed of two devices is used, which can become the most basic component of the optical interconnect network. In TE 0 mode, the insertion loss of the output wavelength of 1.4 μm at the output port is − 1.3 dB, and the crosstalk is − 29.36 dB. The insertion loss of the output wavelength of 1.6 μm is − 1.39 dB, and the crosstalk is − 38.99 dB.

Low Loss Broadband Waveguide Crossing for Silicon-on-Insulator Optical Interconnect

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

High performance ultra-compact SOI waveguide crossing.

Demonstration of a highly efficient multimode interference based silicon waveguide crossing

Compact and Low Cross-Talk Silicon-on-insulator Crossing Using a Periodic Dielectric Waveguide.

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Robust TE0 + TE1 Waveguide Crossing

Low-Loss Waveguide Crossing for Complicated On-Chip Microwave Photonic Processor

Compact Silicon Photonic Waveguide Crossings with Sub- 10-Mdb Loss

Low-loss Silicon Rib Waveguide Crossing with Low Polarization Dependence Loss

Broadband low loss and ultra-low crosstalk waveguide crossings based on multimode interferometer for 840 nm operation

Series of Ultra-Low Loss and Ultra-Compact Multichannel Silicon Waveguide Crossing

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Ultra-low-loss Inverted Taper Coupler for Silicon-on-insulator Ridge Waveguide

5×5 Μm2 Compact Waveguide Crossing Optimized by Genetic Algorithm

Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Ultra-compact high efficiency and low crosstalk optical interconnection structures based on inverse designed nanophotonic elements

Four-mode Waveguide Crossing Via Digitized Meta-Structure

Low-loss and low-cross talk polarization-insensitive multimode silicon waveguide crossing

Inverse-designed Ultra-Compact High Efficiency and Low Crosstalk Optical Interconnect Based on Waveguide Crossing and Wavelength Demultiplexer