Compact Silicon Photonic Waveguide Crossings with Sub- 10-Mdb Loss

Yingying Peng,Huan Li,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t4a.130

2021-01-01

Abstract:We have designed and experimentally demonstrated silicon photonic waveguide crossings for the TE fundamental mode with record-low loss of $6\pm 2\ \text{mdB}$ in the wavelength range of 1520–1560 nm.

What problem does this paper attempt to address?

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Lin Han,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1364/oe.451104

IF: 3.8

2022-01-01

Optics Express

Abstract:An ultralow-loss silicon planar waveguide crossing operating in the O-band was experimentally demonstrated based on the Gaussian beam synthesis method. Elliptical parabolic inverted tapers were introduced in our design to reduce the crossing loss. According to the measurement results, the proposed device exhibits an insertion loss of 0.008 dB, which is the lowest reported loss for planar silicon waveguide crossings operating in the O-band. The device exhibits a low crosstalk below -40 dB over a 40 nm wavelength range with a compact footprint of 18 × 18 µm2 and can be fabricated in a complementary metal-oxide-semiconductor-compatible process.
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
5×5 Μm2 Compact Waveguide Crossing Optimized by Genetic Algorithm

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Chunchuan Yang,Lin Liu,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2017.m2d.2

2017-01-01

Abstract:Waveguide crossing device is a fundamental building block for isolated propagation of two cross waveguides in silicon photonics. In this work, a genetic algorithm optimized compact silicon waveguide crossing of 5x5 mu m(2) for fundamental Transverse Electric (TE) mode is designed, fabricated, and tested. A measured insertion loss of 0.1-0.3 dB with a crosstalk of <-35 dB is achieved in such design scheme.
New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Long Zhang,Shihan Hong,Yiwei Xie,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t1i.6

2021-01-01

Abstract:We propose the concept of silicon photonics beyond the singlemode regime with ultra-low-loss propagation of 0.065 dB/cm. The state-of-art micro-racetrack resonator, high-resolution microwave filter and 100-cm-long delayline are demonstrated with standard 220-nm-SOI (silicon-on-insulator) MPW-foundry processes.
Robust TE0 + TE1 Waveguide Crossing

Pengfei Xu,Yanfeng Zhang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/cleopr.2018.w3a.118

2018-01-01

Abstract:We proposed a silicon waveguide crossing device supporting both TE0 and TEl modes, TE0 mode insertion loss about -1 ~ -1.2 dB and TE1 insertion loss about -0.5 ~ -1 dB, and the crosstalk is better than -30 dB.
Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Long Zhang,Shihan Hong,Yi Wang,Hao Yan,Yiwei Xie,Tangnan Chen,Ming Zhang,Zejie Yu,Yaocheng Shi,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1002/lpor.202100292

2022-01-01

Abstract:Silicon photonics beyond the singlemode regime is applied for enabling ultralow-loss waveguide propagation for the fundamental mode even without any special fabrication process. Here a micro-racetrack resonator is fabricated with a standard 220-nm-SOI (silicon-on-insulator) multiproject-wafer foundry and shows a record high intrinsic quality factor of 1.02x10(7), corresponding to an ultralow propagation loss of only 0.065 dB cm(-1), which is about 20 times less than that of regular 450-nm-wide waveguides on the same chip. A state-of-the-art microwave photonic filter on silicon is then realized with an ultranarrow 3-dB bandwidth of 20.6 MHz and a tuning range of approximate to 20 GHz for the first time. A 100-cm-long delayline employed the broadened waveguides is also demonstrated with compact 90 degrees Euler-curve bends, and the measured average propagation loss is about 0.14 dB cm(-1). The concept of silicon photonics beyond the singlemode regime helps solve the issue of high propagation loss significantly. In particular, it enables silicon photonic devices with enhanced performances, which paves the way for realizing large-scale silicon photonic integration. This concept can be extended further to any other material platforms, such as silicon nitride and lithium niobate. This also brings numerous new opportunities for various applications such as nonlinear photonics, large-scale photonic integration, quantum photonics, microwave photonics, etc.
High performance ultra-compact SOI waveguide crossing.

Hai-Long Han,He Li,Xiao-Pei Zhang,Ang Liu,Tian-Ying Lin,Ze Chen,Hai-Bin Lv,Ming-Hui Lu,Xiao-Ping Liu,Yan-Feng Chen

DOI: https://doi.org/10.1364/OE.26.025602

IF: 3.8

2018-01-01

Optics Express

Abstract:Waveguide crossing is an important integrated photonic component that will be routinely used for high-density and large-scale photonic integrated circuits, such as optical switches and routers. Several techniques have been reported in achieving high performance waveguide crossings on a silicon-on-insulator photonic platform, i.e., low-loss and low-crosstalk waveguide crossings based on multimode interference, bi-layer tapering, optical transformation, metamaterials, and subwavelength gratings. Until recently, not much attention has been given to the reduction of the footprint of waveguide crossings. Here we experimentally demonstrate an ultra-compact waveguide crossing on silicon photonic platform with a footprint only similar to 1 x 1 mu m(2). Our simulations show that it has a low insertion loss (< 0.175 dB) and low crosstalk (< -37dB) across the whole C-band, while the fabricated one has an insertion loss < 0.28 dB and crosstalk around -30 dB for the C-band. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
New-generation silicon photonics beyond the singlemode regime

Long Zhang,Shihan Hong,Yi Wang,Hao Yan,Yiwei Xie,Tangnan Chen,Ming Zhang,Zejie Yu,Yaocheng Shi,Liu Liu,Daoxin Dai

2021-01-01

Abstract: The singlemode condition is one of the most important design rules for optical waveguides in guided-wave optics. The reason following the singlemode condition is that higher-order modes might be excited and thus introduce some undesired mode-mismatching loss as well as inter-mode crosstalk when light propagates along an optical waveguide beyond the singlemode regime. As a result, multimode photonic waveguides are usually not allowed. In this paper, we propose the concept of silicon photonics beyond the singlemode regime, developed with low-loss and low-crosstalk light propagation in multimode photonic waveguides with broadened silicon cores. In particular, silicon photonic waveguides with a broadened core region have shown an ultra-low-loss of ~0.1 dB/cm for the fundamental mode even without any special fabrication process. A micro-racetrack resonator fabricated with standard 220-nm-SOI MPW-foundry processes shows a record intrinsic Q-factor as high as 1.02*107 for the first time, corresponding to ultra-low waveguide propagation loss of only 0.065 dB/cm. A high-performance microwave photonic filter on silicon is then realized with an ultra-narrow 3-dB bandwidth of 20.6 MHz as well as a tuning range of ~20 GHz for the first time. An on-chip 100-cm-long delayline is also demonstrated by using the present broadened SOI photonic waveguides with compact Euler-curve bends, the measured propagation loss is ~0.14 dB/cm. The proposed concept of silicon photonics beyond the singlemode regime helps solve the issue of high propagation loss and also significantly reduces the random phase errors of light due to the random variations of waveguide dimensions. In particularity it enables silicon photonic devices with enhanced performances, which paves the way for new-generation silicon photonics realizing the large-scale photonic integration.
A Compact and Polarization-Insensitive Silicon Waveguide Crossing Based on Subwavelength Grating MMI Couplers

Sailong Wu,Simei Mao,Lidan Zhou,Lin Liu,Yujie Chen,Xin Mu,Lirong Cheng,Zhenmin Chen,Xin Tu,H. Y. Fu

DOI: https://doi.org/10.1364/oe.399568

IF: 3.8

2020-01-01

Optics Express

Abstract:In this work, we proposed and experimentally demonstrated a compact and low polarization-dependent silicon waveguide crossing based on subwavelength grating multimode interference couplers. The subwavelength grating structure decreases the effective refractive index difference and shrinks the device footprint. Our designed device is fabricated on the 220-nm SOI platform and performs well. The measured crossing is characterized with low insertion loss (< 1 dB), low polarization-dependence loss (< 0.6 dB), and low crosstalk (< -35 dB) for both TE and TM polarizations with a compact footprint of 12.5 μm × 12.5 μm.
Low-Loss Waveguide Crossing for Complicated On-Chip Microwave Photonic Processor

Ziyang Lu,Jiachen Li,Hongwei Chen,Sigang Yang,Minghua Chen

DOI: https://doi.org/10.1109/jphot.2024.3366937

IF: 2.4

2024-03-15

IEEE Photonics Journal

Abstract:To realize large device density and high complexity in future on-chip microwave photonic system, a waveguide crossing with low loss, crosstalk and reflection is designed on the silicon nitride waveguide platform, which is compatible for on-chip microwave photonic processor. Furthermore, a multi-channel microwave photonic signal processing chip is fabricated based on the proposed waveguide crossings, and the performance of the chip is evaluated. In simulation, the proposed waveguide crossing maintains an insertion loss of ∼0.08 dB per crossing in the wavelength range of 1500 nm – 1600 nm, while the experiment result is 0.086 dB per crossing. As the wavelength changes, the measured variation of insertion loss per crossing is less than 0.02 dB. The crossings on the signal processing chip induce an extra insertion loss of 1.2 dB to each channel. Meanwhile, the measured crosstalk and reflection are both below −44 dB. Furthermore, the proposed waveguide crossing shows significant robustness for fabrication. With the advantages of ultra-low loss, crosstalk and reflection, the proposed waveguide crossing may support the establishment for future complicated on-chip microwave photonic systems.

engineering, electrical & electronic,optics,physics, applied
Low Loss Broadband Waveguide Crossing for Silicon-on-Insulator Optical Interconnect

Wanyuan Liu,Xin Tu,Huixiao Ma,H.Y. Fu,Dongyu Geng

DOI: https://doi.org/10.1364/acpc.2014.ath3a.52

2014-01-01

Abstract:We demonstrated a waveguide crossing with an average simulation loss of 0.03 dB and a crosstalk of over 43.8 dB. It also exhibits a good performance process tolerance with 3D FDTD simulation.
Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Defen Guo,Tao Chu

DOI: https://doi.org/10.1364/OL.43.004795

IF: 3.6

2018-01-01

Optics Letters

Abstract:We proposed and experimentally demonstrated a compact, broadband, and low-loss-mode-evolution-based 2 x 23 dB coupler on a silicon-on-insulator platform. The waveguide widths and separations of the coupler were tapered in an optimal manner using the shortcuts to the adiabaticity method. The coupler, with a similar to 70 mu m total length and 200 nm feature size, exhibited <0.3 dB measured excess loss over a broadband wavelength range from 1500 to 1600 nm. Balanced and unbalanced Mach-Zehnder interferometers fabricated for validation showed extinction ratios larger than 27 and 23 dB, respectively, over a 100 nm bandwidth. The extracted splitting ratio was between 0.48 and 0.52. (C) 2018 Optical Society of America
Compact and Low Cross-Talk Silicon-on-insulator Crossing Using a Periodic Dielectric Waveguide.

Junbo Feng,Qunqing Li,Shoushan Fan

DOI: https://doi.org/10.1364/ol.35.003904

IF: 3.6

2010-01-01

Optics Letters

Abstract:We propose and experimentally demonstrate a compact, highly efficient, and negligible cross-talk silicon-on-insulator crossing using a periodic dielectric waveguide. The crossing occupies a footprint of less than 4 mu m x 4 mu m. Around 0.7 dB insertion loss and lower than -40 dB, cross talk was achieved experimentally over a broad wavelength range. (C) 2010 Optical Society of America
Broadband low loss and ultra-low crosstalk waveguide crossings based on multimode interferometer for 840 nm operation

Stefan Nevlacsil,Paul Muellner,Martin Sagmeister,Jochen Kraft,Rainer Hainberger

DOI: https://doi.org/10.48550/arXiv.2002.11399

2020-02-26

Optics

Abstract:Broadband low loss and ultra-low crosstalk waveguide crossings are a crucial component for photonic integrated circuits to allow a higher integration density of functional components and an increased flexibility in the layout. We report the design of optimized silicon nitride waveguide crossings based on multimode interferometer structures for intersecting light paths of TE/TE-like, TM/TM-like and TE/TM-like polarized light in the near infrared wavelength region of 790 nm to 890 nm. The crossing design for diverse polarization modes facilitates dual polarization operation on a single chip. For all configurations the loss of a single crossing was measured to be 0.05 dB at 840 nm. Within the 100 nm bandwidth losses stayed below 0.16 dB. The crosstalk was estimated to be on the order of -60 dB by means of 3D finite difference time domain simulations.
Compact and broadband dual-polarization waveguide crossing utilizing subwavelength-hole-assisted MMI couplers

Bin Ni,Chenyang Luo,Hanyue Chen,Shengbao Wu,Lianping Hou,Hao Liu,Jichuan Xiong

DOI: https://doi.org/10.1364/ol.505887

IF: 3.6

2023-11-14

Optics Letters

Abstract:In this Letter, an ultracompact silicon-based waveguide crossing for dual polarizations is proposed and experimentally demonstrated using subwavelength-hole-assisted multimode interference couplers. Thanks to the flexible and easy dispersion engineering in the introduced subwavelength-hole-assisted multimode interference couplers, the reduced and equal beat lengths for dual polarizations are accessible via careful parametric optimization, consequently enabling a substantially reduced device size. Experimental results indicate that the proposed crossing (13.6 × 13.6 μm 2 in size) features a low insertion loss of 1.03 dB (0.76 dB) and low crosstalk of –32.5 dB (–37.8 dB) at a central wavelength of 1550 nm for TE (TM) mode, with a broad bandwidth of ∼80 nm for crosstalk of <–18 dB.

optics
Ultra-Low-Loss Silicon Waveguides Covering a Very Large Band

Gangmin Li,Shihan Hong,Long Zhang,Zixu Xu,Daoxin Dai

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10368676

2023-01-01

Abstract:We present an ultra-low-loss silicon waveguide covering a very large band. Additionally, we investigate the waveguide wavelength-dependent scattering losses. Remarkably, we achieve loss reductions of (0.1663, 0.1226, 0.0742) dB/cm around (1310, 1550, 1910) nm, respectively.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Series of Ultra-Low Loss and Ultra-Compact Multichannel Silicon Waveguide Crossing

Zheng Peng,Junbo Feng,Te Du,Wei Cheng,Yan Wang,Shengyin Zang,Hao Cheng,Xiaodong Ren,Yubei Shuai,Hao Liu,Jiagui Wu,Junbo Yang

DOI: https://doi.org/10.1364/oe.462479

IF: 3.8

2022-01-01

Optics Express

Abstract:Ultra-compact waveguide crossing (UC-WC) is a basic component in optoelectronic fusion chip solutions, as its footprint is smaller in the orders of magnitude than that of traditional photonic integrated circuits (PICs). However, a large loss of UC-WC (decibel level) becomes a barrier to scaling and practicality. Here, we propose a series of ultra-low loss UC-WC silicon devices using an advanced hybrid design that combines the adjoint method with the direct binary search (DBS) algorithm. Simulation results show that our 2 x 2 UC-WC has an insertion loss as low as 0.04 dB at 1550 nm, which is about ten times lower than the previous UC-WC results. In the valuable C-band (1530-1565 nm), the insertion loss of UC-WC is lower than -0.05 dB, and the channel crosstalk is lower than -34 dB. Furthermore, for the 3 x 3 UC-WC device, the highest insertion loss in the entire C-band is approximately -0.07 dB, and the highest channel crosstalk is lower than -33 dB. Additionally, the 4 x 4 and more complex 8 x 8 UC-WC devices were also analyzed. The highest insertion loss for 4 x 4 and 8 x 8 UC-WC in the C-band is only -0.19 dB and -0.20 dB, respectively, and the highest channel crosstalk is approximately -22dB and -28 dB, respectively. These results confirm that the designed devices possess two attractive features simultaneously: ultra-compactness and ultra-low insertion loss, which may be of great value in future large-scale optoelectronic fusion chips. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Compact Silicon Photonic Waveguide Crossings with Sub- 10-Mdb Loss

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

5×5 Μm2 Compact Waveguide Crossing Optimized by Genetic Algorithm

New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Robust TE0 + TE1 Waveguide Crossing

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

High performance ultra-compact SOI waveguide crossing.

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

New-generation silicon photonics beyond the singlemode regime

A Compact and Polarization-Insensitive Silicon Waveguide Crossing Based on Subwavelength Grating MMI Couplers

Low-Loss Waveguide Crossing for Complicated On-Chip Microwave Photonic Processor

Low Loss Broadband Waveguide Crossing for Silicon-on-Insulator Optical Interconnect

Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Compact and Low Cross-Talk Silicon-on-insulator Crossing Using a Periodic Dielectric Waveguide.

Broadband low loss and ultra-low crosstalk waveguide crossings based on multimode interferometer for 840 nm operation

Compact and broadband dual-polarization waveguide crossing utilizing subwavelength-hole-assisted MMI couplers

Ultra-Low-Loss Silicon Waveguides Covering a Very Large Band

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Series of Ultra-Low Loss and Ultra-Compact Multichannel Silicon Waveguide Crossing