Abstract:When photonics integrated circuits (PICs) become more massive in scale, the area of chip can't be taken full advantage of with 2×2 waveguide crossings with a 90° intersection angle. Crossings with small angles would be a better idea to further improve the area utilization, but few works have researched 2×2 crossings with different angles. In this paper, in order to have an ultra-compact footprint and a flexible intersection angle while keeping a high performance, we report a series of compact X-shaped waveguide crossings in silicon-on-insulator (SOI) waveguides for fundamental transverse electric (TE0) mode, designed by using finite-difference frequency-domain (FDFD) numerical analysis method and a global optimization method. Thanks to inverse design, a compact footprint as small as 4.5 µm2 and various angles between two input/output waveguides of 30°, 45°, 60°, 80° and 90° are achieved. Simulation results show that all crossings have good performance of insertion losses (ILs) within 0.1∼0.3 dB and crosstalks (CTs) within -20∼-50 dB in the wavelength range of 1525∼1582 nm. Moreover, the designed crossings were fabricated on a commercially available 220-nm SOI platform. The measured results show that the ILs of all crossings are around 0.2∼0.4 dB and the CTs are around -20 dB∼-32 dB; especially for the 30° intersection angle, the crossing has IL around 0.2 dB and CT around -31 dB in C band. Besides, we theoretically propose an approach of a primary structure processing technique to enhance the device performance with a more compact footprint. This technique is to remove the redundant structures in conjunction with the electric field distribution during the optimization procedure of inverse design. For the new 90° crossing structure produced by it, simulation results show that ILs of 0.29 ± 0.03 dB and CTs of -37 ± 2.5 dB in the wavelength range of 1500∼1600 nm are achieved and the footprint is shrunk by 25.5%.

High performance ultra-compact SOI waveguide crossing.

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