Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications

Narrow-band Add-Drop Filters Based on Silicon Nitride Multimode Waveguide Bragg Grating

Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

Inverse Design of High Extinction Ration Narrow-Band Filters Based on Silicon Nitride Multimode Waveguide Bragg Gratings