Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Dispersion Engineering of Suspended Silicon Photonic Waveguides for Broadband Mid-Infrared Wavelength Conversion

Broadband Spectra Translation Between Mid-Infrared Band and Telecom Band in a Nonlinear Silicon-Based Symmetric Hybrid Plasmonic Waveguide

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Mid-Infrared (Mir) Mach-Zehnder Silicon Modulator At 2 Mu M Wavelength Based On Interleaved Pn Junction

Silicon-based Ultra-Wide Discrete Band Conversion

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources