Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Zhihua Tu,Taoce Yin,Lars H. Frandsen,Daru Chen,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.23919/ps.2019.8818068

2019-01-01

Abstract:A silicon-rich nitride (SRN) ridge waveguide is fabricated and measured to exhibit a low loss of ~2 dB/cm and a nonlinear parameter γ of 1.47 W -1 m -1 at a wavelength of 2 μm.

What problem does this paper attempt to address?

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Leif K. Oxenloweand,Lars H. Frandsen

2016-01-01

Abstract:Silicon/silicon-rich nitride hybrid waveguides have been proposed and experimentally demonstrated. The waveguides were measured to have a linear loss of similar to 5.60 dB/cm and a nonlinear parameter of similar to 32.3 W(-1)m(-1).
2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Zhihua Tu,Xiaowei Guan,Daru Chen,Hao Hu,Xiaoyan Wang,Shiming Gao

DOI: https://doi.org/10.1016/j.optcom.2020.126544

IF: 2.4

2020-01-01

Optics Communications

Abstract:A silicon-rich silicon nitride (SRN)/silicon hybrid waveguide is proposed for 2 mu m mid-infrared (MIR) nonlinear applications. In the 1950 nm band, the measured linear loss and nonlinear coefficient for TE mode are 18.6 dB/cm and 7.9 W-1 m(-1), respectively. In a 4-mm-long SRN/silicon hybrid waveguide, the four-wave mixing conversion efficiency reaches -52.3 dB and the 3-dB conversion bandwidth is predicted to be 78 nm when the pump power is only 159 mW. As the nonlinear losses increase with pump power increasing, the nonlinear performance of our hybrid waveguide would exceed that of silicon waveguide when pump power is large and thus our hybrid waveguide is of potential for 2 mu m MIR nonlinear applications.
Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Novel Suspended Small SiO2 Ridge Optical Waveguides for Optical Sensing

Pengxin Chen,Yunpeng Zhu,Sailing He,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2012.ath1b.4

2012-01-01

Abstract:Novel suspended SiO2 ridge optical waveguides on silicon are fabricated and characterized. The propagation loss and the bend loss measured are about 0.385dB/cm and 0.037dB/90° respectively for the fabricated 1μm-wide waveguides with a bending radius of 100μm when operating at 1550 nm.
Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Pengxin Chen,Yunpeng Zhu,Yaocheng Shi,Daoxin Dai,Sailing He

DOI: https://doi.org/10.1364/oe.20.022531

IF: 3.8

2012-01-01

Optics Express

Abstract:Novel suspended SiO(2) ridge optical waveguides on silicon are fabricated and characterized. The present suspended SiO(2) ridge optical waveguide has a SiO(2) ridge core surrounded by air. The propagation loss and the bend loss measured are about 0.385dB/cm and 0.037dB/90° respectively for the fabricated 1 μm-wide waveguides with a bending radius of 100 μm when operating at the wavelength of 1550 nm. With the present suspended SiO(2) optical waveguides, a small racetrack resonator with a radius of 100 μm is also demonstrated and the measured Q-factor is about 3160.
Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/GROUP4.2019.8925811

2019-01-01

Abstract:Of late, the 2 μm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 μm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.
300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Xuguang Zhang,Yuxin Liang,Yujun Chen,Bitao Shen,Jiahui Huang,Chenghao Lao,Yichen Wu,Zhihui Li,Dapeng Liu,Haowen Shu,Weiwei Hu,Xingjun Wang,Naidi Cui,Lin Chang

DOI: https://doi.org/10.1063/5.0221409

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15x106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.
Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Daoxin Dai,Zhen Sheng

DOI: https://doi.org/10.1364/JOSAB.24.002853

2007-01-01

Abstract:The characteristics of silicon-on-insulator (SOD ridge waveguides are analyzed by using a cylindrical fall-vectorial finite-difference method mode solver with a perfectly-matched layer treatment. First, the single-mode condition for an SOI ridge nanowire with different Si core thicknesses is obtained. The obtained single-mode condition is different from that for the conventional micrometrical SOI ridge waveguides with a large cross section. By adjusting the cross section (the core width and the etching depth), one can have a nonbirefringent SOI ridge nanowire. The analysis on the bending loss of SOI ridge nanowires shows that one can have a relatively small bending radius even with a shallow etching (i.e., a small ratio gamma between the etching depth and the total thickness). For example, even when one chooses a small ratio gamma=0.4, one still has a low bending loss with "small bending radius of 15 mu m for an SOI nanowire with a thin core h(co)= 250 nm, which is very different from a conventional large SOI ridge waveguide. (c) 2007 Optical Society of America
High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Yu Ping,Qiu Chen,Hu Ting,Qiu Hui-Ye,Ge Fang-Fang,Jiang Xiao-Qing,Yang Jian-Yi

DOI: https://doi.org/10.1088/0256-307x/30/10/104204

2013-01-01

Abstract:We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450 × 220nm single mode silicon ridge waveguide. Transmission spectrum measurement is performed by using the vertical fiber-grating coupling characterization method. The Q factor up to 2.6 × 104 is found by fitting the line shape of the transmission spectrum, and the normalized transmission of nearly 20% is achieved. Three-dimensional finite difference time domain calculations show that the modal volume of the fundamental mode is 1.1(λ/n)3. With the standard silicon waveguide width, the demonstrated 1D PhC cavity may be used as a building block for integrated photonic circuits and on-chip sensing applications.
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Yang Chen,Thalia Dominguez Bucio,Ali Z. Khokhar,Mehdi Banakar,Katarzyna Grabska,Frederic Y. Gardes,Robert Halir,Inigo Molina-Fernandez,Pavel Cheben,Jian-Jun He

DOI: https://doi.org/10.1364/ol.42.003566

2017-01-01

Abstract:A silicon nitride waveguide is a promising platform for integrated photonics, particularly due to its low propagation loss compared to other complementary metal-oxide-semiconductor compatible waveguides, including silicon-on-insulator. Input/output coupling in such thin optical waveguides is a key issue for practical implementations. Fiber-to-chip grating couplers in silicon nitride usually exhibit low coupling efficiency because the moderate index contrast leads to weak radiation strengths and poor directionality. Here, we present the first, to the best of our knowledge, experimental demonstration of a recently proposed apodized-imaging fiber-to-chip grating coupler in silicon nitride that images an in-plane waveguide mode to an optical fiber placed at a specific distance above the chip. By employing amplitude and phase apodization, the diffracted optical field of the grating is matched to the fiber mode. High grating directionality is achieved by using staircase grating teeth, which produce a blazing effect. Experimental results demonstrate an apodized-imaging grating coupler with a record coupling efficiency of -1.5 dB and a 3 dB bandwidth of 60 nm in the C-band. (C) 2017 Optical Society of America
Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Dmitrii Belogolovskii,Yeshaiahu Fainman,Nikola Alic

DOI: https://doi.org/10.1002/adom.202401299

IF: 9

2024-10-16

Advanced Optical Materials

Abstract:The study presents a comprehensive analysis of the optical nonlinear losses observed in multiple silicon‐rich nitride (SRN) nano‐waveguides. Free carrier absorption (FCA) is established as the cause of the nonlinear losses due to photo‐induced carriers generated in the C‐band. The dynamics of FCA is thoroughly investigated, and it is concluded that SRN defects are responsible for the observed nonlinear losses. Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties.

materials science, multidisciplinary,optics
Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1109/group4.2016.7739061

2016-01-01

Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.
Nonlinear-Optic Silicon-Nanowire Waveguides

Hirohito Yamada,Masayuki Shirane,Tao Chu,Hiroyuki Yokoyama,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1143/JJAP.44.6541

2005-01-01

Abstract:Using a 4-mm-long compact silicon-nanowire waveguide, we demonstrated nonlinear-optic effects such as the spectral broadening of optical short pulses due to self-phase modulation and nonlinear transmittance due to two-photon absorption. At a 12W input power level, we observed a 1.5-pi nonlinear phase shift and a strong saturation of optical output power in a sample. We also estimated the third-order nonlinear coefficient 112 and the two-photon absorption coefficient beta, and compared them with those previously reported.
Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide

Siyang Zhou,Zhongwen Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2656995

2022-01-01

Abstract:An on-chip TE-pass polarizer working near 850nm band is designed and fabricated on silicon nitride platform. The structure is very simple, using a straight silicon nitride waveguide separated from a metal strip by a low index silicon oxide spacer layer. By optimizing the thickness of the spacer layer, the metal strip introduces more loss for TM mode than TE mode. The measured extinction ratio of the fabricated device is around 20dB over a 16nm wavelength range from 837nm to 853nm for a 3mm-long polarizer.

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Novel Suspended Small SiO2 Ridge Optical Waveguides for Optical Sensing

Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Nonlinear-Optic Silicon-Nanowire Waveguides

Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide