Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Novel Suspended Small SiO2 Ridge Optical Waveguides for Optical Sensing

Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Waveguide Bends from Nanometric Silica Wires

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Fabrication and Characterization of Small Optical Ridge Waveguides Based on Su-8 Polymer

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Study of Silicon-on-glass Waveguides

Experimental Demonstration of Deeply-Etched SiO<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula> Ridge Optical Waveguides and Devices

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Suspended silicon waveguides for long-wave infrared wavelengths

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Silicon-on-Insulator Nanowire Based Optical Waveguide Biosensors

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Ultra-low-loss High-Aspect-ratio Si3N4 Waveguides.

Highly-sensitive Optical Waveguide Sensor Based on SiON Using Two Cascaded-Microring Resonators

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit