Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Leif K. Oxenloweand,Lars H. Frandsen

2016-01-01

Abstract:Silicon/silicon-rich nitride hybrid waveguides have been proposed and experimentally demonstrated. The waveguides were measured to have a linear loss of similar to 5.60 dB/cm and a nonlinear parameter of similar to 32.3 W(-1)m(-1).

What problem does this paper attempt to address?

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Leif K. Oxenløwe,Lars H. Frandsen

DOI: https://doi.org/10.1364/acpc.2016.ath3g.4

2016-01-01

Abstract:Silicon/silicon-rich nitride hybrid waveguides have been proposed and experimentally demonstrated. The waveguides were measured to have a linear loss of ~5.60 dB/cm and a nonlinear parameter of ~32.3 W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> .
Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Zhihua Tu,Daru Chen,Hao Hu,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.3390/app10228087

2020-01-01

Applied Sciences

Abstract:Optical communication using the 2 μm wavelength band is attracting growing attention for the sake of mitigating the information ‘capacity crunch’ on the way, where on-chip nonlinear waveguides can play vital roles. Here, silicon-rich nitride (SRN) ridge waveguides with different widths and rib heights are fabricated and measured. Linear characterizations show a loss of ~2 dB/cm of the SRN ridge waveguides and four-wave mixing (FWM) experiments with a continuous wave (CW) pump reveal a nonlinear refractive index of ~1.13 × 10−18 m2/W of the SRN material around the wavelength 1950 nm. With the extracted parameters, dimensions of the SRN ridge waveguides are optimally designed for improved nonlinear performances for the 2 μm band, i.e., a maximal nonlinear figure of merit (i.e., the ratio of nonlinearity to loss) of 0.0804 W−1 or a super-broad FWM bandwidth of 518 nm. Our results and design method open up new possibilities for achieving high-performance on-chip nonlinear waveguides for long-wavelength optical communications.
Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Zhihua Tu,Taoce Yin,Lars H. Frandsen,Daru Chen,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.23919/ps.2019.8818068

2019-01-01

Abstract:A silicon-rich nitride (SRN) ridge waveguide is fabricated and measured to exhibit a low loss of ~2 dB/cm and a nonlinear parameter γ of 1.47 W -1 m -1 at a wavelength of 2 μm.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Zhihua Tu,Xiaowei Guan,Daru Chen,Hao Hu,Xiaoyan Wang,Shiming Gao

DOI: https://doi.org/10.1016/j.optcom.2020.126544

IF: 2.4

2020-01-01

Optics Communications

Abstract:A silicon-rich silicon nitride (SRN)/silicon hybrid waveguide is proposed for 2 mu m mid-infrared (MIR) nonlinear applications. In the 1950 nm band, the measured linear loss and nonlinear coefficient for TE mode are 18.6 dB/cm and 7.9 W-1 m(-1), respectively. In a 4-mm-long SRN/silicon hybrid waveguide, the four-wave mixing conversion efficiency reaches -52.3 dB and the 3-dB conversion bandwidth is predicted to be 78 nm when the pump power is only 159 mW. As the nonlinear losses increase with pump power increasing, the nonlinear performance of our hybrid waveguide would exceed that of silicon waveguide when pump power is large and thus our hybrid waveguide is of potential for 2 mu m MIR nonlinear applications.
Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Qiang Jin,Xibin Li,Junfan Chen,Shiming Gao

DOI: https://doi.org/10.1038/s41598-017-12554-6

IF: 4.6

2017-01-01

Scientific Reports

Abstract:A graphene-silicon hybrid waveguide with a dielectric spacer is proposed to enhance the nonlinear response in ultra-wide wavelength range by applying graphene's broadband highly nonlinear optical properties. The chemical potential of the graphene layer is tuned to satisfy the resonance condition and hence a low propagation loss is obtained. The dielectric spacer is used for avoiding additional free-carrier-absorption loss due to carrier interchange between the silicon core and the graphene layer. Aiming at the special waveguide structure with ultra-thin graphene layer, a full-vectorial theoretical model is developed to analyze its nonlinear properties. The waveguide dimensions are optimized in terms of the nonlinear parameter. The proposed hybrid waveguide exhibits high nonlinearity enhancement in an ultra-broad wavelength region covering near-infrared and mid-infrared bands. The conversion efficiency for a degenerate four-wave mixing process reaches -18.5 dB only with a pump power of 0.5 W and a waveguide length of tens of microns. In the wavelength range of 1.3-2.3 μm, the conversion efficiency can be kept stable by adopting suitable waveguide geometry and length. The corresponding 3-dB bandwidth can reach 40-110 nm for each fixed pump. The graphene-silicon hybrid waveguide has the potential to support chip-scale nonlinear applications in both near- and mid-infrared bands.
A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

Qiang Jin,Jiamei Lu,Qiang Yan,Xibin Li,Qianyu Gao,Shiming Gao

DOI: https://doi.org/10.1364/cleo_at.2015.jtu5a.27

2015-01-01

Abstract:A novel graphene-silicon hybrid waveguide is proposed to enhance the nonlinearity in near-infrared band using a MoO3 overlayer for light confinement. A four-wave mixing efficiency of -27.3 dB is numerically obtained in a 25-μm-long waveguide.
Nonlinear-Optic Silicon-Nanowire Waveguides

Hirohito Yamada,Masayuki Shirane,Tao Chu,Hiroyuki Yokoyama,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1143/JJAP.44.6541

2005-01-01

Abstract:Using a 4-mm-long compact silicon-nanowire waveguide, we demonstrated nonlinear-optic effects such as the spectral broadening of optical short pulses due to self-phase modulation and nonlinear transmittance due to two-photon absorption. At a 12W input power level, we observed a 1.5-pi nonlinear phase shift and a strong saturation of optical output power in a sample. We also estimated the third-order nonlinear coefficient 112 and the two-photon absorption coefficient beta, and compared them with those previously reported.
Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

Lin Chang,Martin H. P. Pfeiffer,Nicolas Volet,Michael Zervas,Jon D. Peters,Costanza L. Manganelli,Eric J. Stanton,Yifei Li,Tobias J. Kippenberg,John E. Bowers

DOI: https://doi.org/10.1364/ol.42.000803

IF: 3.6

2017-01-01

Optics Letters

Abstract:An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si3N4 and the LN-Si3N4 waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
A hybrid chalcogenide-on-silicon platform for nonlinear photonics

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

2020-01-01

Abstract:We demonstrate a highly nonlinear hybrid waveguide platform based on infiltration of As2S3 chalcogenide glass into silicon slot waveguides. The nonlinear properties of the hybrid waveguides have been precisely quantified via a bidirectional top-hat D-scan method, enabling a direct comparison between properties measured using different device geometries. We experimentally report hybrid As2S3-Si slot waveguides with a two-photon absorption (TPA) figure of merit exceeding 2 at near infrared wavelengths. These waveguides allow for nonlinear phase shifts greater than π with minimal overall losses. These results pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.
High confinement, high yield Si3N4 waveguides for nonlinear optical application

Jörn P. Epping,Marcel Hoekman,Richard Mateman,Arne Leinse,René G. Heideman,Albert van Rees,Peter J.M. van der Slot,Chris J. Lee,Klaus-J. Boller

DOI: https://doi.org/10.1364/OE.23.000642

2015-01-13

Abstract:In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

Optics
Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Houssein El Dirani,Laurene Youssef,Camille Petit-Etienne,Sebastien Kerdiles,Philippe Grosse,Christelle Monat,Erwine Pargon,Corrado Sciancalepore

DOI: https://doi.org/10.1364/OE.27.030726

2019-10-14

Abstract:Efficient nonlinear phenomena in integrated waveguides imply the realization in a nonlinear material of tightly confining waveguides sustaining guided modes with a small effective area with ultra-low propagation losses as well as high-power damage thresholds. However, when the waveguide cross-sectional dimensions keep shrinking, propagation losses and the probability of failure events tend to increase dramatically. In this work, we report both the fabrication and testing of high-confinement, ultralow-loss silicon nitride waveguides and resonators showing average attenuation coefficients as low as ∼3 dB/m across the S-, C-, and L bands for 1.6-µm-width × 800-nm-height dimensions, with intrinsic quality factors approaching ∼107 in the C band. The present technology results in very high cross-wafer device performance uniformities, low thermal susceptibility, and high power damage thresholds. In particular, we developed here an optimized fully subtractive process introducing a novel chemical-physical multistep annealing and encapsulation fabrication method, resulting in high quality Si3N4-based photonic integrated circuits for energy-efficient nonlinear photonics and quantum optics.
Optical characterization of deuterated silicon-rich nitride waveguides

Xavier X. Chia,George F. R. Chen,Yanmei Cao,Peng Xing,Doris K. T. Ng,Dawn T. H. Tan

DOI: https://doi.org/10.48550/arXiv.2202.10023

2022-02-21

Abstract:Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.

Optics,Applied Physics
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
Study on Properties of Silicon Nano-Slab Waveguides

XIAO Si-miao,LI Yu-bo,LI Guang-bo,JIANG Xiao-qing,WANG Ming-hua,YANG Jian-yi

DOI: https://doi.org/10.3969/j.issn.1005-5630.2005.05.021

2005-01-01

Abstract:In this article we analyzed the guiding properties of air-clad silicon dielectric optical waveguides which have the core width of nanometre size based on Maxwell equation and numerical analysis.By programming,we obtained the proportion of power distribution in cladding,core,and substrate;the curve of how the effective refractive index varied with the core width;how group refractive index and group velocities varied with wavelength and the dispersion curve.We compared these properties with micron-sized waveguides,and found that because of the decrease of core width,the mode field leaks out a lot,which enhances the coupling.This is very important to design and fabric nano-sized optical devices.
Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Dmitrii Belogolovskii,Yeshaiahu Fainman,Nikola Alic

DOI: https://doi.org/10.1002/adom.202401299

IF: 9

2024-10-16

Advanced Optical Materials

Abstract:The study presents a comprehensive analysis of the optical nonlinear losses observed in multiple silicon‐rich nitride (SRN) nano‐waveguides. Free carrier absorption (FCA) is established as the cause of the nonlinear losses due to photo‐induced carriers generated in the C‐band. The dynamics of FCA is thoroughly investigated, and it is concluded that SRN defects are responsible for the observed nonlinear losses. Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties.

materials science, multidisciplinary,optics
Hybrid Lithium Niobate and Silicon Photonic Waveguides

Peter O. Weigel,Marc Savanier,Christopher DeRose,Andrew T. Pomerene,Andrew L. Starbuck,Anthony L. Lentine,Vincent Stenger,Shayan Mookherjea

DOI: https://doi.org/10.48550/arXiv.1510.01777

2015-10-06

Optics

Abstract:We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.
Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Yang Chen,Thalia Dominguez Bucio,Ali Z. Khokhar,Mehdi Banakar,Katarzyna Grabska,Frederic Y. Gardes,Robert Halir,Inigo Molina-Fernandez,Pavel Cheben,Jian-Jun He

DOI: https://doi.org/10.1364/ol.42.003566

2017-01-01

Abstract:A silicon nitride waveguide is a promising platform for integrated photonics, particularly due to its low propagation loss compared to other complementary metal-oxide-semiconductor compatible waveguides, including silicon-on-insulator. Input/output coupling in such thin optical waveguides is a key issue for practical implementations. Fiber-to-chip grating couplers in silicon nitride usually exhibit low coupling efficiency because the moderate index contrast leads to weak radiation strengths and poor directionality. Here, we present the first, to the best of our knowledge, experimental demonstration of a recently proposed apodized-imaging fiber-to-chip grating coupler in silicon nitride that images an in-plane waveguide mode to an optical fiber placed at a specific distance above the chip. By employing amplitude and phase apodization, the diffracted optical field of the grating is matched to the fiber mode. High grating directionality is achieved by using staircase grating teeth, which produce a blazing effect. Experimental results demonstrate an apodized-imaging grating coupler with a record coupling efficiency of -1.5 dB and a 3 dB bandwidth of 60 nm in the C-band. (C) 2017 Optical Society of America
Dispersion Characteristics of Nonreciprocal Silicon-on-insulator Waveguide with YIG Layer

Huiying Wang,Zhi Wang,Zhiyong Li,Qiang Li,Lanlan Liu,Chongqing Wu

2019-01-01

Abstract:A C-band nonreciprocal waveguide with YIG(Bi:YIG/Ce:YIG) is designed to study nonreciprocal propagation of surface magnetoplasmons. The dispersion equation is calculated to analyze nonreciprocal dispersion relation and time-delay characteristics. The minimum group velocity can reach 1.25×10 −4 c.

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

Nonlinear-Optic Silicon-Nanowire Waveguides

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

A hybrid chalcogenide-on-silicon platform for nonlinear photonics

High confinement, high yield Si3N4 waveguides for nonlinear optical application

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Optical characterization of deuterated silicon-rich nitride waveguides

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Study on Properties of Silicon Nano-Slab Waveguides

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Hybrid Lithium Niobate and Silicon Photonic Waveguides

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Dispersion Characteristics of Nonreciprocal Silicon-on-insulator Waveguide with YIG Layer