Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Hybrid Lithium Niobate and Silicon Photonic Waveguides

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Efficient Second Harmonic Generation in Silicon Covered Lithium Niobate Waveguides

Heterogeneous Integration of Lithium Niobate and Silicon Nitride Waveguides for Wafer-Scale Photonic Integrated Circuits on Silicon.

High-efficiency hybrid amorphous silicon grating couplers for sub-micron-sized lithium niobate waveguides.

2Μm Mid-Infrared Silicon-Rich Silicon Nitride/silicon Hybrid Nonlinear Waveguides

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Channel Waveguides in Lithium Niobate and Lithium Tantalate

Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

A Novel Graphene-Silicon Hybrid Waveguide for Nonlinearity Enhancement in Near-Infrared Band

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Hybrid surface phononic waveguide using hyperbolic boron nitride.

Elimination of the fundamental mode hybridization on an x-cut lithium-niobate-on-insulator by using a densely packed bent waveguide array

Lithium–Niobate Channel Waveguide for the Realization of Long-Period Gratings

Integrated Lithium Niobate Platform for Nonlinear Optics and Electro-Optic Applications

A Lithium Niobate-Si3n4 Platform on Silicon by Heterogeneous Wafer Bonding