Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Comparative Study of Losses in Ultrasharp Silicon-on-Insulator Nanowire Bends

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Modeling of Evanescent Coupling Between Two Parallel Optical Nanowires

Polarization characteristics of shallow-etched SOI ridge waveguide with non-rectangular cross section

Study on Properties of Silicon Nano-Slab Waveguides

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Novel Suspended Small SiO2 Ridge Optical Waveguides for Optical Sensing

Analysis of the Birefringence of A Silicon-On-Insulator Rib Waveguide

Modeling and analysis of p-i-n diodes for Si based waveguide devices

Optical Characteristic Analysis of Ridge Dielectric Wave-Guides

Linear and Nonlinear Characterization of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Analysis of the Thermo-Optic Effect in Lateral-Carrier-injection SOI Ridge Waveguide Devices

Study of Silicon-on-glass Waveguides

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Impact of Lateral Leakage Loss in a Kind of Shallowly-etched Rib Waveguides on SOI with Non-rectangular Cross-section

Deeply Etched $\hbox{sio}_{2}$ Ridge Waveguide for Sharp Bends