Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Analysis of the Birefringence of A Silicon-On-Insulator Rib Waveguide

Slab-Modulated Uniform and Sampled Bragg Gratings in Soi Ridge Waveguides

Polarization characteristics of shallow-etched SOI ridge waveguide with non-rectangular cross section

Polarized Single-Mode Condition for SOI Rib Waveguide with Large Cross Section

Analysis of Rib Waveguides with Trapezoidal Cross Section

Numerical analysis of silicon-on-insulator ridge nanowires by using a full-vectorial finite-difference method mode solver

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Impact of Lateral Leakage Loss in a Kind of Shallowly-etched Rib Waveguides on SOI with Non-rectangular Cross-section

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Study of Silicon-on-glass Waveguides

Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide

Birefringence compensated arrayed waveguide grating

Analysis of the Thermo-Optic Effect in Lateral-Carrier-injection SOI Ridge Waveguide Devices

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Structural Optimizations of SOI-based Single-Mode Rib Waveguide Bends

Manipulating Leaky Mode in Silicon Waveguides Harnessing Bound States in the Continuum.

Slab-Modulated Sidewall Bragg Gratings in Silicon-on-Insulator Ridge Waveguides

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Optimization of Deep-Etched,Single-Mode GaAs/GaAlAs Optical Rib Waveguides Using Discrete Spectral Index Method

Dispersion Characteristics of Nonreciprocal Silicon-on-insulator Waveguide with YIG Layer