Polarization characteristics of shallow-etched SOI ridge waveguide with non-rectangular cross section

Ming Zhang,Xinwei Yao,Hailin Zou,Ying Du,Jun Zou,Liqiang Wang
DOI: https://doi.org/10.1140/epjp/s13360-021-02126-z
2021-01-01
The European Physical Journal Plus
Abstract:To control the polarization of shallow etched ridge waveguide made of crystalline silicon on insulator (SOI), a non-rectangular section SOI waveguide is proposed. The transmittivity formulas of TE 0 and TM 0 in the proposed waveguide are deduced, and the finite difference time domain method is used for analysis. It is found that the transmittivity of TE 0 and TM 0 modes shows great deviation in some parameter range; however, the difference is less than 0.03% in some other parameters, which could be regarded as polarization independent. At the same time, the sensitivity to structure parameters of modes in the non-rectangular waveguide is lower than that of the rectangular. Therefore, the proposed non-rectangular SOI ridge waveguide is expected to improve the polarization independence of the waveguide.
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