Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Manipulating Leaky Mode in Silicon Waveguides Harnessing Bound States in the Continuum.

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Inverse Design of High Extinction Ration Narrow-Band Filters Based on Silicon Nitride Multimode Waveguide Bragg Gratings

Slab-Modulated Sidewall Bragg Gratings in Silicon-on-Insulator Ridge Waveguides

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides.

A Low Loss Band-Rejection And Band-Pass Filter Based On Silicon Photonic Multimode Bragg Gratings

Silicon Band-Rejection and Band-Pass Filter Based on Asymmetric Bragg Sidewall Gratings in A Multimode Waveguide

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Novel structure of passive ring waveguide resonator on silicon substrate

60-Nm-thick Basic Photonic Components and Bragg Gratings on the Silicon-on-insulator Platform.

Low loss hollow-core waveguide on a silicon substrate

Low-Loss Photonic Integrated Elements Based on Bound Bloch Surface Wave in the Continuum

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

One-way Optical Power Transmission in Silicon-on-insulator (SOI) Waveguide with Broad Passband and High Efficiency

New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Ultra-low loss waveguide platform in silicon photonics

Bound-state-in-continuum guided modes in a multilayer electro-optically active photonic integrated circuit platform

Ultra-Low-Loss Silicon Waveguides Covering a Very Large Band