Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Fabrication and Characterization of Suspended SiO2 Ridge Optical Waveguides and the Devices.

Novel Suspended Small SiO2 Ridge Optical Waveguides for Optical Sensing

Slab-Modulated Uniform and Sampled Bragg Gratings in Soi Ridge Waveguides

Fabrication and Characterization of Small Optical Ridge Waveguides Based on Su-8 Polymer

Experimental Demonstration of Deeply-Etched SiO<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula> Ridge Optical Waveguides and Devices

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Fabrication of silicon-on-glass waveguides

Fabrication and Characterization of Silicon Photonic Waveguides and Devices Via Selective Oxidation Process

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Study of Silicon-on-glass Waveguides

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Fabrication and characterization of deeply-etched SiO2 waveguides

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Novel structure of passive ring waveguide resonator on silicon substrate

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Slab-Modulated Sidewall Bragg Gratings in Silicon-on-Insulator Ridge Waveguides

Fabrication techniques for colymer/Si optical waveguide

Study on Properties of Silicon Nano-Slab Waveguides

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides