Abstract:The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS circuits with 500 nm thick Si, operating around 3.8 µm wavelength. Results on facet coupling and sub-wavelength engineered grating coupler solutions in the mid-IR regime will be compared.

Low-Loss Silicon Platform for Broadband Mid-Infrared Photonics

Low-Loss Silicon-Photonic Devices for Mid-Infrared Applications

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Low-loss silicon core fibre platform for broadband nonlinear photonics in the mid-infrared

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Silicon-based Ultra-Wide Discrete Band Conversion

Ultra-low loss waveguide platform in silicon photonics

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Silicon Photonics As A Broadband Platform For Parametric Oscillation In The Mid-Infrared

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Wafer-Scale Demonstration of Low-Loss (~0.43 dB/cm), High-Bandwidth (> 38 GHz), Silicon Photonics Platform Operating at the C-Band

Low-loss Silicon Nitride Waveguides and High-Q Microring Resonators at 2-Μm Wavelength

Low Loss (<0.2db Per Transition) CMOS Compatible Multi-Layer Si3N4-on-SOI Platform with Thermal-Optics Device Integration for Silicon Photonics

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

Compact low loss silicon-on-insulator waveguide for broadband mid-infrared photonics

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Silicon photonic platforms for mid-infrared applications [Invited]

Absorption and Scattering Limits of Integrated Photonics in the Visible Spectrum