Abstract:In this paper,the design optimization and experimental demonstration of single-drive push-pull silicon electro-optic modulators are presented. In order to improve the modulation efficiency and lower the optical propagation loss,the PN junction profile and doping concentrations are firstly optimized. Next,the impedance match,phase match and microwave loss are studied,and in particular,the influence of low-doping slab width,travelling-wave electrode (TWE) width and spacing on the modulator performance are analyzed. Following the comprehensive theoretical analysis and numerical simulation,the modulator performance measurements,including the optical transmission spectrum upon single-drive push-pull tuning,small-signal microwave signal response,and high-speed digital signal modulation are consequently carried out. The on-chip insertion loss of the modulators is around 7-9 dB and the half-wave voltage is 5 V. At a bias voltage of 0 V,the optimized modulator has a modulation bandwidth of >18 GHz. The microwave reflectivity at the entrance of the TWE is less than -20 dB,suggesting good impedance match. When the reverse bias voltage is increased to 4 V,the modulation bandwidth can exceed 30 GHz,allowing for realization of 56 Gbit/s on-off keying (OOK) and 40 Gbit/s binary phase-shift keying (BPSK) modulations.

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