Design and fabrication of a monolithic optoelectronic integrated circuit chip based on CMOS compatible technology

Weifeng Guo,Yong Zhao,Wanjun Wang,Haifeng Shao,Jianyi Yang,Xiaoqing Jiang
DOI: https://doi.org/10.1088/0256-307X/29/4/044209
2012-01-01
Chinese Physics Letters
Abstract:A monolithic optoelectronic integrated circuit chip on a silicon-on-insulator is designed and fabricated based on complementary metal oxide semiconductor compatible technology. The chip integrates an optical Mach-Zehnder modulator (MZM) and a CMOS driving circuit with the amplification function. Test results show that the extinction ratio of the MZM is close to 20 dB and the small-signal gain of the CMOS driving circuit is about 26.9 dB. A 50 mV 10 MHz sine wave signal is amplified by the driving circuit, and then drives the MZM successfully.
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