60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.

What problem does this paper attempt to address?

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

Xi Xiao,Xianyao Li,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/ipcon.2012.6358589

2012-01-01

Abstract:We present a compact silicon microring modulator with record modulation speed. A novel zigzag PN junction is designed for high efficiency and high bandwidth. 44 Gbit/s NRZ modulation is demonstrated with 3 dB extinction ratio.
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Xi Xiao,Hao Xu,Xianyao Li,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.002507

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.
SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Jinzhong Yu,Xi Xiao,Zhiyong Li,Zhongchao Fan,Kang Xiong,Hao Xu,Xianyao Li,Tao Chu,Yude Yu

DOI: https://doi.org/10.1364/iont.2012.ith3b.1

2012-01-01

Abstract:Research results for SOI optical modulator/switch, optical couplers in our group will be presented in the paper. Modulation speed of silicon MZI and MRR modulators with interleaved reverse PN junctions both achieve 44 Gbit/s, respectively. SOI optical couplers with 6 different structures have been developed, coupling efficiency of 65% has been obtained.
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

Yuan Yuan,Yiwei Peng,Wayne V. Sorin,Stanley Cheung,Zhihong Huang,Di Liang,Marco Fiorentino,Raymond G. Beausoleil

DOI: https://doi.org/10.1038/s41467-024-45301-3

IF: 16.6

2024-01-31

Nature Communications

Abstract:Abstract Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.

multidisciplinary sciences
Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Zhiyong Li,Liang Zhou,Xi Xiao,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1007/s12200-012-0197-6

2012-01-01

Frontiers of Optoelectronics

Abstract:Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.
High-speed packaging for silicon modulator

Yadong Liu,Tao Chu

DOI: https://doi.org/10.3390/optofluidics2017-04387

2017-01-01

Abstract:This paper reports a high-speed packaging for Silicon Mach-Zehnder modulators (MZMs). The radio frequency (RF) input port of the package is commercially available GPPO type. High-frequency ceramic substrate is designed to shorten the length of gold wire to suppress the RF attenuation. Gratings and single-mode fibers using inclined-surface coupling are used to realize low-loss and large tolerance coupling. In measurement, clear eye diagrams with ER of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulations. Silicon photonics has become a hot research topic in the field of optoelectronics in recent years, since silicon–based optical device can achieve high density integration, low power consumption, low cost photonic devices, realize monolithic integration with electronic devices, and it is compatible with traditional CMOS processes [1]. Silicon electro-optic modulators which are key devices in optoelectronic information transmission and processing have got great developments in recent years. High speed OOK silicon modulators have been demonstrated [2-4]. The silicon modulator packaging has also been studied [5-6]. However, the operating speed of packaged silicon modulators still need to be improved. Our butterfly package for silicon modulator is illustrated in Figure 1. Two main designs were applied for high speed packaging: the modulator chip was designed with reverse PN mode, whose PN junction capacitance is smaller and the modulator electrode was carefully designed using CPW travelling-wave electrodes; GCPW transmission lines with metallic holes were adopted to fabricate the high-frequency ceramic substrates to make the high-speed electrical signal effective loading on the electrode of the MZM chip. Since micro-strip-like line (MSL) mode in GCPW line might exist, which usually cause energy coupling of CPW mode and prompt a microwave resonant of transmission response in high frequency range [7], we made metallic holes on a transmission line to suppress the microwave resonant [8-9]. Grating coupler and single-mode fiber with inclined-surface are used in optical coupling. The advantages of this optical coupling method is larger misalignment tolerance and cheap cleaved fiber packaging. Nickel metal tube is installed close to the inclined-surface of single-mode fiber, the position and angle of the optical fiber is adjusted by special fixture clamping nickel metal tube and adjusting the special fixture. Assuming the optical fiber is parallel to the chip surface, there is a relation of θ=2*φ-90o. We choose the φ=51 deg. as our grating incidence angle is 12 degree. Eye-diagram measurements were carried to demonstrate the high-speed operation of the packaged modules. Experimental results were presented in Fig. 4(a) and 4(b). Clear eye diagrams with ERs of 10.1 dB and 7.6 dB were obtained at 25 Gb/s and 40 Gb/s modulation speed. By improving the welding between the pin of GPPO connector and ceramic substrates, further reducing the length of gold wires from the ceramic substrates to the modulator pads, the speed of the packaged MZM module could be higher.
High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/acpc.2012.as3b.3

2012-01-01

Abstract:We report a 40 Gbit/s traveling-wave silicon Mach-Zehnder modulator fabricated in a commercial 0.18 μm CMOS process. A distributed circuit model is proposed to characterize the bandwidth performance of this modulator.
Silicon modulators for advanced optical communications

Zhiping Zhou,Tiantian Li,Dan Wang,Junlong Zhang,Fan Zhang,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/acpc.2014.af1a.6

2014-01-01

Abstract:Silicon Mach-Zehnder modulators were used in IM-DD advanced optical communications. 6.25 Gbaud Nyquist-16, 32 and 64-Quadrature Amplitude Modulation optical signals were generated. 160 km transmission of 100 Gb/s WDM Nyquist-16QAM signals were also demonstrated.
240 Gb/s Optical Transmission Based on an Ultrafast Silicon Microring Modulator

Yuguang Zhang,Hongguang Zhang,Junwen Zhang,Jia Liu,Lei Wang,Daigao Chen,Nan Chi,Xi Xiao,Shaohua Yu

DOI: https://doi.org/10.1364/prj.441791

IF: 7.6

2022-01-01

Photonics Research

Abstract:An ultrafast microring modulator (MRM) is fabricated and presented with V π · L of 0.825 V · cm . A 240 Gb/s PAM-8 signal transmission over 2 km standard single-mode fiber (SSMF) is experimentally demonstrated. PN junction doping concentration is optimized, and the overall performance of the MRM is improved. Optical peaking is introduced to further extend the EO bandwidth from 52 to 110 GHz by detuning the input wavelength. A titanium nitride heater with 0.1 nm/mW tuning efficiency is implemented above the MRM to adjust the resonant wavelength. High bit rate modulations based on the high-performance and compact MRM are carried out. By adopting off-line signal processing in the transmitter and receiver side, 120 Gb/s NRZ, 220 Gb/s PAM-4, and 240 Gb/s PAM-8 are measured with the back-to-back bit error ratio (BER) of 5.5 × 10 − 4 , 1.5 × 10 − 2 , and 1.4 × 10 − 2 , respectively. A BER with different received optical power and 2 km SSMF transmission is also investigated. The BER for 220 Gb/s PAM-4 and 240 Gb/s PAM-8 after 2 km SSMF transmission is calculated to be 1.7 × 10 − 2 and 1.5 × 10 − 2 , which meet with the threshold of soft-decision forward-error correction, respectively.
Beyond 300Gbps Silicon Microring Modulator with AI Acceleration

Zhongya Li,Shaohua Yu,Fangchen Hu,N. Chi,Sizhe Xing,Hongguang Zhang,Yuguang Zhang,Zhixue He,Jianyang Shi,Junwen Zhang,Xi Xiao

2021-11-09

Abstract:Silicon microring modulator (Si-MRM) has become one of the most promising compact modulators to meet the increasing capacity requirements of the next generation optical interconnection. The limited electro-optical (E-O) bandwidth, low modulation efficiency, and inherent modulation nonlinearity are the major factors that limit the Si-MRM modulation speed. To address these issues, we comprehensively optimize the Si-MRM from the device to the modulation and the signal processing. Large modulation bandwidth over 67GHz is achieved in our newly fabricated Si-MRM. Additionally, the laser wavelength and bias voltage of Si-MRM are optimized to significantly improve the modulation performance. Finally, we comprehensively study the theoretical model of modulation nonlinearity in Si-MRM, especially transient nonlinearity. A bidirectional gate recurrent unit (Bi-GRU) neural network with minor modification is applied to compensate for the nonlinear impairments. With all these efforts, we experimentally demonstrate a 302 Gbps Si-MRM-based O-band optical interconnection and achieve 300 Gbps transmission over a 1-km standard single-mode fiber using the discrete multitone modulation format with bit and power loading (BPL-DMT).

Physics,Engineering

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

High-speed silicon modulator based on cascaded microring resonators.

High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

30 Gbps high optical bandwidth silicon modulator

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Highly Efficient Silicon Michelson Interferometer Modulators

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

High-speed Silicon Modulators for the 2 Μm Wavelength Band

A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

High-speed packaging for silicon modulator

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Silicon modulators for advanced optical communications

240 Gb/s Optical Transmission Based on an Ultrafast Silicon Microring Modulator

Beyond 300Gbps Silicon Microring Modulator with AI Acceleration