A 5 × 200 Gbps microring modulator silicon chip empowered by two-segment Z-shape junctions

Yuan Yuan,Yiwei Peng,Wayne V. Sorin,Stanley Cheung,Zhihong Huang,Di Liang,Marco Fiorentino,Raymond G. Beausoleil

DOI: https://doi.org/10.1038/s41467-024-45301-3

IF: 16.6

2024-01-31

Nature Communications

Abstract:Abstract Optical interconnects have been recognized as the most promising solution to accelerate data transmission in the artificial intelligence era. Benefiting from their cost-effectiveness, compact dimensions, and wavelength multiplexing capability, silicon microring resonator modulators emerge as a compelling and scalable means for optical modulation. However, the inherent trade-off between bandwidth and modulation efficiency hinders the device performance. Here we demonstrate a dense wavelength division multiplexing microring modulator array on a silicon chip with a full data rate of 1 Tb/s. By harnessing the two individual p-n junctions with an optimized Z-shape doping profile, the inherent trade-off of silicon depletion-mode modulators is greatly mitigated, allowing for higher-speed modulation with energy consumption of sub-ten fJ/bit. This state-of-the-art demonstration shows that all-silicon modulators can practically enable future 200 Gb/s/lane optical interconnects.

multidisciplinary sciences

What problem does this paper attempt to address?

The paper attempts to address the problem of achieving high-speed, efficient data transmission in next-generation optical interconnects. Specifically, the main challenges faced by researchers include:

1. **The inherent trade-off between bandwidth and modulation efficiency**: Traditional silicon-based microring modulators often sacrifice modulation efficiency when increasing bandwidth, and vice versa. This trade-off limits the overall performance of the device.

2. **High data rate demands**: With the development of emerging applications such as Artificial Intelligence (AI), Extended Reality (XR), and Full Self-Driving (FSD), the demand for higher data transmission rates is increasing. Traditional electrical interconnect technologies struggle to meet the bandwidth, density, and power consumption requirements of these applications.

3. **Seamless high-speed communication in multi-node, multi-chip systems**: To support large-scale computing and training, multi-node, multi-chip systems require efficient interconnect technologies to achieve seamless, high-speed communication between processors.

To address these issues, the researchers proposed a silicon-based microring modulator (Si MRM) based on a two-segment Z-shaped junction. By optimizing the Z-shaped doping profile, this design can significantly alleviate the trade-off between bandwidth and modulation efficiency, thereby achieving higher modulation speeds and lower energy consumption. Specifically, the design achieves the following goals:

- **High bandwidth**: Demonstrates an electro-optic bandwidth of up to approximately 48.6 GHz.
- **High modulation efficiency**: Modulation efficiency \(V_\pi \cdot L\) is about 0.6 V·cm.
- **Low energy consumption**: Under 200 Gb/s PAM4 modulation, the energy consumption is about 6.3 fJ/bit.
- **Dense Wavelength Division Multiplexing (DWDM) with multiple channels**: The experiment demonstrated a 5-channel DWDM Si MRM array, supporting a data transmission rate of 1 Tb/s, with inter-channel crosstalk less than -33 dB.

In summary, through innovative design and technical means, this paper aims to provide a practical solution for future 200 Gb/s/channel optical interconnects.