Abstract:Silicon modulators have garnered considerable attention owing to their potential applications in high-density integration and high-speed modulation. However, they are increasingly challenged by the limited 3 dB bandwidth as the demand for modulation speed in optical communications continues to rise, impeding their ability to compete with modulators made of thin-film lithium niobate. This bandwidth limitation arises because of the parasitic resistance and capacitance in the PN junction of the silicon modulators. This study demonstrates the first silicon modulator exceeding 110 GHz without any resonant structure using a tunable time-frequency equalization technique. This substantial breakthrough enables on-off keying modulation at a rate of 140 Gbaud without digital signal processing. These accomplishments represent the highest bandwidth and maximum baud rate achieved without digital signal processing in an all-silicon modulator, reaching the testing limitations of the experimental system. This opens the possibility of attaining modulation rates of up to 200 or even 300 Gbaud by adopting design strategies such as slow light and technologies such as digital signal processing. This advancement extends the speed capabilities of silicon modulators to the level of thin-film lithium niobate modulators, thereby promoting their application in the broader array of fields, such as linear-drive pluggable transceivers.

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High-speed silicon modulator based on cascaded microring resonators.

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

30 Gbps high optical bandwidth silicon modulator

Highly Efficient Silicon Michelson Interferometer Modulators

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Optical modulation and detection based on a PN junction embedded silicon waveguide

Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator

High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Slow-light Silicon Modulator with 110-Ghz Bandwidth.

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

High Speed Silicon Mach-Zehnder Modulator with Circuit Model Analysis

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Silicon modulator exceeding 110 GHz using tunable time-frequency equalization

Development of Silicon Photonic Devices for Optical Interconnects