Abstract:Low driving voltage (Vpp), high-speed silicon microring modulator plays a critical role in energy-efficient optical interconnect and optical computing systems owing to its ultra-compact footprint and capability for on-chip wavelength-division multiplexing. However, existing silicon microring modulators usually require more than 2 V of Vpp, which is limited by the relatively weak plasma dispersion effect of silicon and the small capacitance density of the reversed PN-junction. Here we present a highly efficient metal-oxide semiconductor capacitor (MOSCAP) microring modulator through heterogeneous integration between silicon photonics and titanium-doped indium oxide, which is a high-mobility transparent conductive oxide (TCO) material with a strong plasma dispersion effect. The device is co-fabricated by Intel's photonics fab and TCO patterning processes at Oregon State University, which exhibits a high electro-optic modulation efficiency of 117 pm/V with a low VpiL of 0.12 Vcm, and consequently can be driven by an extremely low Vpp of 0.8 V. At a 11 GHz modulation bandwidth where the modulator is limited by the high parasitic capacitance, we obtained 25 Gb/s clear eye diagrams with energy efficiency of 53 fJ/bit and demonstrated 35 Gb/s open eyes with a higher driving voltage. Further optimization of the device is expected to increase the modulation bandwidth up to 52 GHz that can encode data at 100 Gb/s for next-generation, energy-efficient optical communication and computation with sub-volt driving voltage without using any high voltage swing amplifier.

What problem does this paper attempt to address?

The main problem this paper attempts to address is the high driving voltage (typically over 2 V) required for existing silicon-based microring modulators (Si-MRM) in high-speed electro-optic modulation. This limits their direct integration with low-voltage CMOS logic circuits, necessitating high-power high-voltage swing CMOS transmitters to drive these modulators. To solve this issue, the authors propose an efficient metal-oxide-semiconductor capacitor (MOSCAP) microring modulator, achieving high-speed electro-optic modulation at low driving voltages (below 1 V) through the heterogeneous integration of high-mobility transparent conductive oxide (TCO) material—titanium-doped indium oxide (ITiO). Specifically, the study aims to achieve the following goals: 1. **Reduce driving voltage**: Achieve driving voltages below 1 V by optimizing device structure and material properties. 2. **Improve modulation efficiency**: Enhance electro-optic modulation efficiency to reduce the required driving voltage and energy consumption. 3. **Increase modulation bandwidth**: Increase modulation bandwidth by reducing parasitic capacitance and resistance, supporting higher data transmission rates. The authors demonstrate the design and fabrication of ITiO-gated MOSCAP Si-MRM with high electro-optic modulation efficiency and low driving voltage, showing clear eye diagrams at 25 Gb/s and open eye diagrams at 35 Gb/s. With further optimization, it is expected to achieve a modulation bandwidth of 52 GHz and a data transmission rate of 100 Gb/s. These results provide an important technical foundation for future high-efficiency optical communication and computing systems.

Sub-Volt High-Speed Silicon MOSCAP Microring Modulator Driven by High Mobility Conductive Oxide

Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide

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