Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator

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Ultrafast and Energy-Efficient Electro-Optic Modulation Based on a Hybrid Silicon/in2o3 Cavity

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

High-speed Silicon Modulators for the 2 Μm Wavelength Band

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

High-speed silicon modulator based on cascaded microring resonators.

A Graphene-on-gap Modulator with High Modulation Efficiency

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

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Compact High-Speed Electro-Optic Modulator Based on a Silicon Photonic-Crystal Nanobeam Cavity with Gated Graphene

Slow-light Silicon Modulator with 110-Ghz Bandwidth.

Silicon modulator exceeding 110 GHz using tunable time-frequency equalization

Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 µm waveband

Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 μm waveband

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide

Analysis of an Electro-Optic Modulator Based on a Graphene-Silicon Hybrid 1D Photonic Crystal Nanobeam Cavity.