Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Ultra-compact Electro-Optic Modulator Based on Etchless Lithium Niobate Photonic Crystal Nanobeam Cavity.

Horizontally Slotted Photonic Crystal Nanobeam Cavity with Embedded Active Nanopillars for Ultrafast Direct Modulation

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Polarization-insensitive Electro-Optical Modulator Based on Polymer-Filled Silicon Cross-Slot Waveguide

A Novel Electrode Structure with a Reverse-Biased P⿿n Diode for High Speed Polymer-Infiltrated Slot Modulators

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

An Improved Surface-Plasmonic Nanobeam Cavity for Higher Q and Smaller V

High-Q Antisymmetric Multimode Nanobeam Photonic Crystal Cavities in Silicon Waveguides

Ultra-compact Lithium Niobate Microcavity Electro-Optic Modulator beyond 110 GHz

High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator

A Wideband Electro-Optic Modulator Based on Long Range Surface Plasmon Resonances

Ultracompact Channel Add-Drop Filter Based on Single Multimode Nanobeam Photonic Crystal Cavity

Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

Plate-slot polymer waveguide modulator on silicon-on-insulator