Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Electro-Optic Silicon Modulator With Horizontal Photonic Crystal Slot Slab

Analysis of Electrooptic Modulator With 1-D Slotted Photonic Crystal Nanobeam Cavity

Silicon Based Ultra-Compact Modulator with Photonic Crystal

Electro-Optic Polymer Assisted Optical Switch Based on Silicon Slot Structure

Ultracompact optical modulator based on graphene-silica metamaterial.

High-speed Silicon Modulators for the 2 Μm Wavelength Band

High-Q Antisymmetric Multimode Nanobeam Photonic Crystal Cavities in Silicon Waveguides

High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform

Polarization-insensitive Electro-Optical Modulator Based on Polymer-Filled Silicon Cross-Slot Waveguide

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

A Silicon Optical Single Sideband Modulator with Ultra-High Sideband Suppression Ratio

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Optical Add-Drop Multiplexer with Hexagonal-Hole Lattice PC Slab Waveguides

Ultra-compact exciton polariton modulator based on van der Waals semiconductors

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Ultra-compact low-voltage and slow-light MZI electro-optic modulator based on monolithically integrated photonic crystal

High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

Ultrahigh thermal-efficient all-optical silicon photonic crystal nanobeam cavity modulator with TPA-induced thermo-optic effect