Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators
Iman Taghavi,Razi Dehghannasiri,Tianren Fan,Alexander Tofini,Hesam Moradinejad,Ali. A. Efterkhar,Sudip Shekhar,Lukas Chrostowski,Nicolas A. F. Jaeger,Ali Adibi
DOI: https://doi.org/10.1364/OE.460830
2022-03-11
Abstract:An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_\pi L$'s below 1.2 <a class="link-external link-http" href="http://V.mm" rel="external noopener nofollow">this http URL</a> are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_\pi L$'s of 0.35 <a class="link-external link-http" href="http://V.mm" rel="external noopener nofollow">this http URL</a> have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.
Applied Physics,Optics