Abstract:Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage. It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.

Memory and Negative Photoconductivity Effects of Ge Nanocrystals Embedded in ZrO2/Al2O3 Gate Dielectrics

Structure and Electric Property Comparison Between Ge Nanoclusters Embedded in Al2o3 and Al2o3/Zro2

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Third-Order Optical Nonlinearity and Negative Photoconductivity of Ge Nanocrystals in Al2o3 Dielectric

Investigation of Ge Nanocrytals in a Metal-Insulator-semiconductor Structure with a HfO2∕SiO2 Stack As the Tunnel Dielectric

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Performance and reliability feature of nanocrystal memory devices

Nonideality of Negative Capacitance Ge Field-Effect Transistors Without Internal Metal Gate

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Charge Storage Characteristics in Metal-Oxide-semiconductor Memory Structure Based on Gradual Ge1-xSix/Si Heteronanocrystals

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Memory properties of Ge quantum dots and rings MOS structure prepared by pulsed laser deposition

Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures