Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Tunnelling and Storage of Charges in A-Sinx/Nc-Si/A-Sinx Structures

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Different Charging Behaviors Between Electrons and Holes in Si Nanocrystals Embedded in SiN X Matrix by the Influence of Near-Interface Oxide Traps

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Surface States in the Alxga1-Xn Barrier in Alxga1-Xn/Gan Heterostructures