Abstract:Engineering silicon into nanostructures has been a well-adopted strategy to improve the cyclic performance of silicon as a lithium-ion battery anode. Here, we show that the electrode performance can be further improved by alloying silicon with germanium. We have evaluated the electrode performance of SixGe1-x nanoparticles (NPs) with different compositions. Experimentally, SixGe1-x NPs with compositions approaching Si50Ge50 are found to have better cyclic retention than both Si-rich and Ge-rich NPs. During the charge/discharge process, NP merging and Si-Ge homogenization are observed. In addition, a distinct morphology difference is observed after 100 cycles, which is believed to be responsible for the different capacity retention behavior. The present study on SixGe1-x alloy NPs sheds light on the development of Si-based electrode materials for stable operation in lithium-ion batteries (e.g., through a comprehensive design of material structure and chemical composition). The investigation of composition-dependent morphology evolution in the delithiated Li-SiGe ternary alloy also significantly broadens our understanding of dealloying in complex systems, and it is complementary to the well-established understanding of dealloying behavior in binary systems (e.g., Au-Ag alloys).

Charge Storage Characteristics in Metal-Oxide-semiconductor Memory Structure Based on Gradual Ge1-xSix/Si Heteronanocrystals

Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge_(1-x)Si_x/Si Heteronanocrystals

Memory characteristics of Ge1-xSix/Si hetero-nanocrystals in metal-oxide-semiconductor structures

Gradual Ge<inf>1&#x2212;x</inf>Si<inf>x</inf>/Si Heteronanocrystals Based Non-Volatile Floating Gate Memory Device with Asymmetric Tunnel Barriers

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

Simulation Study on Charge Storage Characteristics of Ge/Si Nanocrystal Memory

Capacity Retention Behavior and Morphology Evolution of SixGe1−xnanoparticles As Lithium-Ion Battery Anode

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure