Abstract:The amorphous-to-crystalline transition of Ge/Sb2Te3 nanocomposite multilayer films with various thickness ratios of Ge to Sb2Te3 were investigated by utilizing in situ temperature-dependent film resistance measurements. The crystallization temperature and activation energy for the crystallization of the multilayer films increased with the increase in thickness ratio of Ge to Sb2Te3. The difference in sheet resistance between amorphous and crystalline states could reach as high as 104Ω/□. The crystallization temperature and activation energy for the crystallization of Ge/Sb2Te3 nanocomposite multilayer films was proved to be larger than that of conventional Ge2Sb2Te5 film, which ensures a better data retention for phase-change random access memory (PCRAM) use. A data retention temperature for 10 years of the amorphous state [Ge (2nm)/Sb2Te3 (3nm)]40 film was estimated to be 165°C. Transmission electron microscopy (TEM) images revealed that Ge/Sb2Te3 nanocomposite multilayer films had layered structures with clear interfaces.

Simulation Study on Charge Storage Characteristics of Ge/Si Nanocrystal Memory

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge_(1-x)Si_x/Si Heteronanocrystals

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Performance and reliability feature of nanocrystal memory devices

Electrical Characteristics of a Metal–insulator–semiconductor Memory Structure Containing Ge Nanocrystals

Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application

Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Charge Storage Characteristics in Metal-Oxide-semiconductor Memory Structure Based on Gradual Ge1-xSix/Si Heteronanocrystals

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Gradual Ge<inf>1&#x2212;x</inf>Si<inf>x</inf>/Si Heteronanocrystals Based Non-Volatile Floating Gate Memory Device with Asymmetric Tunnel Barriers

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment