Abstract:In this article, we investigate the storage enhancement mechanism of stacked multilayer nanocrystallite silicon (nc-Si) structures in a master-equation-based equivalent circuit model. As a theoretical extension from our previous experimental works, we reveal the detail injection sequence of electrons into the multilayer nc-Si structure via a direct tunneling process, and how the retention property is enhanced by the stacked structures. Seeking a further improvement in the multilayer nc-Si-based nonvolatile memory structure, we compare two major approaches for that purpose, i.e. (1) by further increasing the number of stacked layers or (2) by adopting an asymmetric double-layer structure. It is shown that the latter is more promising for achieving better nonvolatile storage property and shows a more effective threshold shifting, while retaining the virtues of direct tunneling process like fast write/erase and low operation voltage. We suggest that these results provide important guides for practical design of memory devices based on multilayer nc-Si floating gate structures.

Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Performance and reliability feature of nanocrystal memory devices

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Simulation Study on Charge Storage Characteristics of Ge/Si Nanocrystal Memory

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Atomistic simulation of phase change memory during switching

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Simulation of Charge Trapping Memory with Novel Structures

A Three-Dimensional Numerical Simulator of Phase-Change Memory by Random Nucleation and Growth Approach