Abstract:Non-volatile memory, which can simultaneously store data and compute in memory, is a promising candidate to break through “memory bottleneck”. However, its operation speed and thermal stability are still contradictory and difficult to meet the requirement of in-memory computing especially in high-temperature applications. In this work, optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 material is proposed, where the picosecond laser is used to perform the information recording/erasing operation based on the reversible phase-change characteristics while resistance signal is detected to realize the information readout. Results imply that the Cr doped Ge2Sb2Te5 film with Cr concentration of 10.7 at. % has high crystallization temperature (289 °C) and ten-year data-retention temperature (221 °C), low density-change rate (2.3%) and small resistance drift coefficients (0.022 at 85 °C, 0.056 at 120 °C, 0.070 at 150 °C, and 0.00131 for the laser induced SET state). The corresponding memory device has the SET/RESET operation speeds of as fast as 1820 ps/13 ps accompanied by the RESET/SET resistance ratio of higher than two orders of magnitude. The structural analyses indicate that Cr doping can suppress the growth of grains and reduce the grain size, improving the thermal stability of amorphous Ge2Sb2Te5 thin film while the octahedral/defective octahedral motif ensures its fast phase-change speed. Therefore, Cr doped Ge2Sb2Te5 based optoelectronic hybrid phase-change memory with superior thermal stability and ultrafast operation speed may be one of the promising solutions for in-memory computing.

Atomistic simulation of phase change memory during switching

Modeling Heterogeneous Melting in Phase Change Memory Devices

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Ab initio molecular dynamics and materials design for embedded phase-change memory

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Unlocking device-scale atomistic modelling of phase-change memory materials

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Crystallization dynamics probed by transient resistance in phase change memory cells

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Element-specific Amorphization of Vacancy-Ordered GeSbTe for Ternary-State Phase Change Memory

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film