Abstract:Electrothermal investigation on vertically aligned single-walled carbon nanotube (SWCNT) contacted phase-change memory (PCM) array is performed using the 3-D time-domain finite-element method. The in-house-developed algorithm is verified by comparing the simulated results with the experimental ones published by others. Thermal coupling between adjacent cells, which may cause current leakage and reliability degradation, is characterized for PCMs with different geometrical parameters, which could be caused by fabrication variation. It is shown that spacing variation between adjacent PCM cells draws a slight effect on their thermal coupling. However, thermal boundary resistance of the phase-change material-oxide interface and SWCNT diameter affect temperature rise and thermal coupling significantly. On the other hand, it is indicated that the SWCNT contacted PCM has microampere-scale programming current and nanosecond-scale thermal response time, which make it vulnerable to electrostatic discharge (ESD). Electrothermal responses to ESD are captured and compared, which show that unintentional ESD can change the state of PCM and result in error programming.

A Three-Dimensional Numerical Simulator of Phase-Change Memory by Random Nucleation and Growth Approach

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Thermal Expansion of Phase-Change Random Access Memory Cells

Numerical Simulation of Three-Dimensional Dendritic Growth Using Phase-Field Method

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Contact Size Scaling Of A W-Contact Phase-Change Memory Cell Based On Numerical Simulation

Thermal analysis of nonvolatile and non rotation phase change memory cell

Phase-Field Simulation of Three-Dimensional Dendritic Growth

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory