Abstract:Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage. It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.

Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Optical properties of Ge/Si quantum dot superlattices

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Structure and Electric Property Comparison Between Ge Nanoclusters Embedded in Al2o3 and Al2o3/Zro2

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Investigation of Ge Nanocrytals in a Metal-Insulator-semiconductor Structure with a HfO2∕SiO2 Stack As the Tunnel Dielectric

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Memory and Negative Photoconductivity Effects of Ge Nanocrystals Embedded in ZrO2/Al2O3 Gate Dielectrics

Theoretical Study of High Performance Germanium Nanowire Quantum Dot

Quantum Characterization of Some Cluster-Based Materials

Quantum capacitance properties of the holes in planar germanium

Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO 2 :Ge QDs/n-Si) grown by MBE

Fe Nanoclusters on the Ge(001) Surface Studied by Scanning Tunneling Microscopy, Density Functional Theory Calculations and X-Ray Magnetic Circular Dichroism