Abstract:The bias-dependent electrical characteristics of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy. The results reveal that the conductive characteristics of QDs are strongly influenced by the applied bias. At low (-0.5 to - 2.0 V) and high (-2.5 to - 4.0 V) biases, the current distributions of individual GeSi QDs exhibit ring-like and disc-like characteristics respectively. The current of the QD's central part increases more quickly than that of the other parts as the bias magnitude increases. Histograms of the magnitude of the current on a number of QDs exhibit the same single-peak feature at low biases, and double- or three-peak features at high biases, where additional peaks appear at large-current locations. On the other hand, histograms of the magnitude of the current on the wetting layers exhibit the same single-peak feature for all biases. This indicates the conductive mechanism is significantly different for QDs and wetting layers. While the small-current peak of QDs can be attributed to the Fowler-Nordheim tunneling model at low biases and the Schottky emission model at high biases respectively, the large-current peak(s) may be attributed to the discrete energy levels of QDs. The results suggest the conductive mechanisms of GeSi QDs can be regulated by the applied bias.

Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy

Quantum Levels in Ge Quantum Dots Studied by Photocurrent Spectroscopy and Admittance Spectroscopy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Optical properties of Ge/Si quantum dot superlattices

Study of Coupling Effect in Double-Layer Quantum Dots by Admittance Spectroscopy

Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement

Increased Conductance of Individual Self-Assembled GeSi Quantum Dots by Inter-Dot Coupling Studied by Conductive Atomic Force Microscopy

Coulomb Charging Effect of Holes in Ge Quantum Dots Studied by Deep Level Transient Spectroscopy

Effects of a Native Oxide Layer on the Conductive Atomic Force Microscopy Measurements of Self-Assembled Ge Quantum Dots

Undoped accumulation-mode Si/SiGe quantum dots

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Photocurrent Study of Ge/Si Double Quantum Dots

Energy Levels in Doped SiGe Quantum Well Studied by Admittance Spectroscopy

Energy Levels of Valence Subbands in Si/Si 1- X Ge X Quantum Well by Admittance Spectroscopy

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

Bias-dependent Conductive Characteristics of Individual GeSi Quantum Dots Studied by Conductive Atomic Force Microscopy

Optical And Structural Investigation Of Stacked Ge Quantum Dots