Abstract:The effect of delta-doping on the performance of ten-period Ge/Si quantum-dot (QD) mid-infrared photodetectors (λmax≃3.4 μm) was investigated. Ge QDs fabricated by molecular-beam epitaxy at 500 °C are overgrown with Si at 600 °C. Each Si barrier contains a boron delta-doping layer located near the QD plane to provide holes to the dots. Within the sample set, we examined devices with different positions of the δ-doping layer with respect to the QD plane, different distances between the δ-doping layer and the QD plane, and different doping densities. All detectors show pronounced photovoltaic behavior implying the presence of an internal inversion asymmetry. We observed a reversal of the voltage dependence of responsivity with respect to zero bias when the δ-doping plane is carried from the bottom to the top of the dot layer. This result indicates that the main reason for the asymmetric photoresponse is the existence of a built-in electric field due to the placing dopants in the barriers. Devices with a lower doping density (pB=4×1011 cm−2) or with a shorter distance between the doping layer and QDs (d = 2 nm) are found to operate better in a photoconductive mode with the highest peak detectivity of about 6×1010 cm Hz1/2/W at T = 90 K and 0.2 V bias. The best performance is achieved for the device with pB=12×1011 cm−2 and d = 5 nm in a photovoltaic regime. At a sample temperature of 90 K and no applied bias, a responsivity of 0.83 mA/W and detectivity of 8×1010 cm Hz1/2/W at λ=3.4 μm were measured under normal incidence infrared radiation.

Photocurrent Study of Ge/Si Double Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Optical properties of Ge/Si quantum dot superlattices

Optical study of Ge quantum dots and infrared photodetectors

Quantum Levels in Ge Quantum Dots Studied by Photocurrent Spectroscopy and Admittance Spectroscopy

Ge Quantum Dot Infrared Photo-Detector

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Si-based Ge Quantum Dot Infrared Photodetectors

Photoluminescence of Ge quantum dots buried in silicon

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Interface Interdiffusion Intensified by Formation of Quantum Dots

Influence of delta-doping on the performance of Ge/Si quantum-dot mid-infrared photodetectors

Optical studies of ZnO quantum dots grown on Si(0 0 1)

GeSi Quantum Dots Studied by Grazing Incidence Small Angle X-ray Scattering