Abstract:The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Optical properties of Ge/Si quantum dot superlattices

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Photoluminescence of Ge quantum dots buried in silicon

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Optical study of Ge quantum dots and infrared photodetectors

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Photoluminescence of Ge Quantum Dots Prepared on Porous Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Tunable Photoluminescence of Self-Assembled GeSi Quantum Dots by B+ Implantation and Rapid Thermal Annealing

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Investigation of the properties of molecular beam epitaxy grown self-organized ZnSe quantum dots embedded in ZnS