Abstract:The applications of various optical and electrical characterization techniques to the study of semiconductor quantum dots (QDs) are summarized. Photoconductivity enhancement effect in CdS-PVK nanocomposite is studied by optical absorption, photoluminescence (PL), photoconductivity spectroscopy, and time-resolved PL. It is found that the photoconductivity of the composite is greatly enhanced in comparison with that of a simple mixture of CdS nano-particles and PVK. PL spectra have shown that luminescence from PVK is dramatically quenched by the incorporation of a low density of CdS particles. Time-resolved spectra reveal that the decay of the PL from the dots of the composite in much longer than that in the simple mixture. These have been attributed to a fast carrier transfer mechanism between CdS QDs and PVK matrix. In addition, optical properties of PVP-capped ZnO QDs are investigated in details. Typical PL spectra of PVP-capped ZnO QDs consist of a sharp UV peak located at about 3.45 eV and a broad green emission band centered at 2.34 eV. At certain Zn 2+/ PVP ratios the green emission band is quenched and only strong UV emission remains. This effect is attributed to the surface modification of ZnO quantum dots with PVP. We are able to associate the UV emission from ZnO QDs to localized states by applying temperature and excitation power dependent PL. Finally, the electronic level of molecular beam epitaxy grown self-organized ZnSe QDs embedded in ZnS is determined by applying PL, capacitance-voltage measurement, and deep level transient spectroscopy.

Investigation of the properties of molecular beam epitaxy grown self-organized ZnSe quantum dots embedded in ZnS

Optical and Electrical Characterizations of Znse Self-Organized Quantum Dots Grown by Molecular Beam Epitaxy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Electron Ground State Energy Level Determination of ZnSe Self-Organized Quantum Dots Embedded in ZnS

Optical properties of Ge/Si quantum dot superlattices

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

Optical studies of ZnO quantum dots grown on Si(001)

Optical studies of ZnO quantum dots grown on Si(0 0 1)

CdSe Self-Assembled Quantum Dots with ZnCdMgSe Barriers Emitting Throughout the Visible Spectrum

CHARACTERIZATION OF SEMICONDUCTOR QUANTUM DOTS

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Atomic Ordering in Self-Assembled Epitaxial Ii-Vi and Iv-Vi Compound Semiconductor Quantum Dot Systems

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Reaction-dependent optical behavior and theoretical perspectives of colloidal ZnSe quantum dots

Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier

Formation and optical properties of stacked CdSe self-assembled quantum dots on Zn[sub x]Cd[sub y]Mg[sub 1−x−y]Se barriers

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Optical Properties of ZnSe/ZnSxSe1-x Strained-Layer Supperlattics by Molecular Beam Epitaxy

Electronic structure and optical properties of CdSe/HgSe/CdSe quantum dot quantum well