Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Caixia Jin,Xianghua Shi,Lian Ke,Baoping Zhang,Zhen Ling,Gengcai Yu,Jie Wang,Xiaoyuan Hou
1998-01-01
Abstract:Zn1-xMnxSe/ZnSe strained-layer superlattices are grown by molecular beam epitaxy on GaAs (100) substrates and characterized by X-ray diffraction and low temperature photoluminescence. The main emission peaks in photoluminescence spectra can be attributed to the free exciton between the lowest electron subband and ground light hole subband of the ZnSe well. The energy shifts due to the strain and quantum confinement are calculated on the basis of deformation potential theory and Bastard's method, showing good agreement with the experimental results.
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