Optical Properties of ZnSe/ZnSxSe1-x Strained-Layer Supperlattics by Molecular Beam Epitaxy

史向华,王兴军,俞根才,侯晓远
DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.04.009
2003-01-01
Abstract:ZnSe/ZnSxSe1-x strained-layer supplattices with ZnS0.06Se0.94 buffers are grown on GaAs(100) substrates by molecular beam epitaxy and characterized by X-ray diffraction and low temperature photoluminescence. The main emission peaks in photoluminescence spectra can be attributed to the free exiton between the lowest electron subband and ground heavy-hole subband of ZnSe well. A blue shift of the excitonic peak is observed. The energy shift due to the strain and quantum confinement are theoretically calculated, showing good agreement with the experimental results.
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