Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Caixia Jin,Zhen Ling,Donghong Wang,Gencai Yu,Jie Wang,Daming Huang,Xiaoyuan Hou,Xiaoliang Shen,Wenhua Yao

1997-01-01

Abstract:High quality Zn1-xMnxSe/ZnSe strained-layer superlattices are grown by molecular beam epitaxy on GaAs(100) substrates and characterized by X-ray diffraction and Raman scattering. For the case of a Zn1-xMnxSe/ZnSe superlattice with a larger thickness than a critical thickness, we show that it can be treated as free-standing with ZnSe under biaxial tension and Zn1-xMnxSe under biaxial compression, while the frequency shifts of LO phonons are observed both in ZnSe well layer and Zn1-xMnxSe barrier layer. For the case where the total thickness of a Zn1-xMnxSe/ZnSe superlattice is well bellow the critical thickness, the structure grows pseudomorphically to the buffer layer. In this case, the ZnSe well layers are not strained and Zn1-xMnxSe is under biaxial compressive strain. No shift of Raman frequency is observed in Raman spectrum. The frequency shifts of LO phonons due to the lattice mismatch between the continuous layers are calculated, showing a good agreement with that of theoretical calculations.