Abstract:The in-plane anisotropy (epsilon(x) not equal epsilon(y)) and the off-plane anisotropy (epsilon(x) not equal epsilon(z)) of ZnSe/GaAs interfaces formed under conditions that promote the formation of either Zn-As or Ga-Se bonds are studied by reflectance difference spectroscopy. Two resonance Lines, one at 2.70 eV and the other around 3.0 eV, have been observed. The in-plane anisotropy is along the [110] and the [<1(1)under bar0>] principal axes. The dependence of the resonances on interface formation conditions, the results of the photoreflectance spectroscopy, and the annealing experiments all suggest that the anisotropy is not due to the electro-optic effect resulting from an interface electric field. The reflectance difference spectroscopy results are consistent with the assumption that the anisotropy is the intrinsic properties of ordered ZnSe/GaAs heterovalent interface, that the resonance at 2.70 eV is associated with the interface state of Zn-As bonds and the resonance near 3.0 eV is associated with the interface state of Ga-Se bonds. The presence of a thin layer of S at the ZnSe/GaAs interfaces results in a third resonance at 3.2 eV, probably due to the Ga-S bends. The resonance line shape changes as the top layer thickness varies. Such change can be well explained by a three-layer system with the conventional Fresnel optics and is understood as due to the ZnSe top layer. It is our hope that our results will stimulate more interest in the theoretical study of this interface. (C) 1996 American Vacuum Society.

Raman scattering study of ZnSe epitaxial growth on S-passivated (100) GaAs substrates

Raman-Scattering Characterization of the Crystalline Qualities of Znse Films Grown on S-Passivated Gaas(100) Substrates

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

Hot Wall Epitaxial Growth of ZnSe on S-passivated GaAs (100) Substrate

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Crystal Structure and Raman Scattering in Zn1−xMgxSe Alloys

Raman Scattering Study Of Pbse Grown On (111) Baf2 Substrate

Growth of Znse Films on Gaas by Ionized Cluster Beam Epitaxy

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Molecular beam epitaxial growth and characterization of ZnMgSSe on GaAs

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Structural And Optical Properties Of Zn(1-X)Mg(X)Se Alloys Grown On Gaas(001) Substrates By Molecular Beam Epitaxy

Structure study of Zn1-xMgxSe films grown on GaAs(100) substrates

Structural and optical properties of Zn1− xMgxSe alloys grown on GaAs(0 0 1) substrates by molecular beam epitaxy

Molecular beam epitaxy and optical properties of Zn1-xMnxSe/ZnSe strained-layer superlattices

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Interface states of ZnSe/GaAs interface

Infrared reflection spectra of epitaxial Zn1-xMgxSe films grown on GaAs substrates

Effect of Strain on the Lattice Vibrational Properties of PbSe

Raman scattering from ZnS1-xTex alloys grown on GaAs(100) by molecular beam epitaxy