Structure study of Zn1-xMgxSe films grown on GaAs(100) substrates

Yanfeng, Wei,Daming Huang,Donghong Wang,Caixia Jin,Jie Wang,Xiaoliang Shen

1997-01-01

Abstract:The Zn1-xMgxSe ternary alloys with x from 0 to 1 were grown on GaAs (100) substrates by molecular beam epitaxy. X-ray diffraction and Raman spectra were measured to study their crystal structure. For the samples with low alloy composition x, the films have the crystal structure of zinc blend (100). The other phases such as zinc blend (111) are negligible. For the samples with x-0.5, both zinc blend (100) and (111) structures are found, as shown in X-ray diffraction and Raman spectra. The above two phases, however, show different alloy composition x. The fraction of (111) phase is estimated to be the maximum for the films with x(100)-0.6. For the sample with x=1, i.e., the MgSe film, the crystal structure is the pure rocksalt. The experimental results suggest that the zinc blend (111) is the intermediate structure between zinc blend (100) and rocksalt (100).