Structural and optical properties of Zn1− xMgxSe alloys grown on GaAs(0 0 1) substrates by molecular beam epitaxy
Darning Huang,Xingjun Wang,Yanfeng, Wei,Xiaohan Liu,Lie Wang,Xun Wang,Zhanghai Chen,Wei Lü
DOI: https://doi.org/10.1016/s0022-0248(98)80227-3
IF: 1.8
1998-01-01
Journal of Crystal Growth
Abstract:Abstract The Zn1−xMgxSe alloys for x up to 0.72 have been grown on GaAs(0 0 1) substrates by molecular beam epitaxy. For Zn-rich samples, the pure zincblende (0 0 1) structure is obtained. For Mg-rich films, however, both (1 1 1) and (0 0 1) domains coexist with the former having a lower x value as compared to the latter. Despite its very low content, the (1 1 1) domain has a profound contribution to the optical spectra, suggesting that the (1 1 1) structure is more stable and has higher crystal quality in the Mg-rich films when grown on GaAs(0 0 1) substrates. The measured infrared reflection and photoluminescence spectra can only be understood well when the different structural phases in the films are properly considered.