Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Mnxge1-X Dilute Magnetic Semiconductor Studied by Xafs

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

The Local Structure of Ga1-xMnxN Dilute Magnetic Semiconductors Determined by X-ray Absorption Near Structure

Electronic and Magnetic Properties of Eutectoid Growth Mn-rich Ge1-xMnx Dilute Magnetic Semiconductors

Local Structures Around Mn Atoms in Mnxsi1-X Thin Films Probed by Fluorescence Xafs

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Magnetic Mn-Doped Ge Nanostructures

Mn Occupations in Ga1-Xmnxn Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Magnetism of Amorphous Ge1−xMnx Magnetic Semiconductor Films

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Studies on Structural and Magnetic Properties in Mn-Doped GaN

ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Structural and paramagnetic properties of dilute Ga1-xMnxN