Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

jin zou,yong wang,faxian xiu,zuoming zhao,k l wang

DOI: https://doi.org/10.1109/COMMAD.2012.6472336

2012-01-01

Abstract:In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.

What problem does this paper attempt to address?

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Sun Yu,Sun Zhi-Hu,Zhu San-Yuan,Shi Tong-Fei,Ye Jian,Pan Zhi-Yun,Liu Wen-Han,Wei Shi-Qiang

DOI: https://doi.org/10.7498/aps.56.5471

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The structure of Mn-x Ge1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the Mn-x Ge1-x thin film with low Mn doping concentration (x = 0.070) only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations ( x = 0.250, 0.360), the secondary phase Ge-3 Mn-5 appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn-0.07 Ge-0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn-0.25 Ge-0.75 and Mn-0.36 Ge-0.64 samples, most of the Mn atoms are aggregated to form Ge-3 Mn-5.
ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1002/chin.201339206

2013-01-01

ChemInform

Abstract:AbstractReview: emphasis on the growth and structural properties of Ge:Mn thin films and quantm dots; 50 refs.
Magnetic Mn-Doped Ge Nanostructures

Faxian Xiu

DOI: https://doi.org/10.5402/2012/198590

2012-01-01

ISRN Condensed Matter Physics

Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.
Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Ya Wang,Faxian Xiu,Yong Wang,Hongyi Xu,De Li,Xufeng Kou,Kang L. Wang,Ajey P. Jacob,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2010.07.008

IF: 1.8

2010-01-01

Journal of Crystal Growth

Abstract:The nanostructures and magnetic properties of Ge1−xMnx thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1−4%) and different growth temperatures, have been systematically investigated by transmission electron microscopy and superconducting quantum interference device. It was discovered that when Ge1−xMnx thin films were grown at 70°C, with increase in Mn concentration, Mn-rich tadpole shaped clusters started to nucleate at 1% Mn and become dominate in the entire film at 4% Mn. While for the thin films grown at 150°C, tadpoles was firstly seen in the film with 1% Mn and subsequently Mn-rich secondary precipitates became dominant. The magnetic properties show specific features, which are mainly related to the nature and amount of Mn-rich clusters/precipitates within these thin films.
Mnxge1-X Dilute Magnetic Semiconductor Studied by Xafs

Jian Ye,Yong Jiang,Qinghua Liu,Yu Sun,Zhiyun Pan,Shiqiang Wei

DOI: https://doi.org/10.1088/1742-6596/190/1/012104

2009-01-01

Journal of Physics Conference Series

Abstract:Fluorescence X-ray absorption fine structure (XAFS) technique was used to investigate the local structures of the doped Mn in the MnxGe1-x dilute magnetic semiconductors (DMSs) with different Mn content (x= 0.07, 0.25, 0.36) prepared by magnetron cosputtering method. The results indicate that for the sample with low Mn content (x= 0.07), the Mn atoms are mainly incorporated into the lattice of Ge, and locate at the substitutional sites of Ge atoms with the ratio of 75%. With the Mn content increasing to 0.25 or higher, only part of Mn atoms enter the lattice of Ge and the others exist in the form of the Mn5Ge3 phase whose content increases with the doped Mn concentration. It is found that, in the Mn0.07Ge0.93 the bond length of the first (Mn-Ge) shell is RMn-Ge= 2.50 angstrom, which is bigger than the first (Ge-Ge) shell distance in Ge by about 0.05 angstrom. These results imply that local structure expansion is induced by dilute Mn substituting into Ge sites.
Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Yong Wang,Faxian Xiu,Ya Wang,Xufeng Kou,Ajey P. Jacob,Kang L. Wang,Jin Zou

DOI: https://doi.org/10.1016/j.jallcom.2010.08.134

IF: 6.2

2010-01-01

Journal of Alloys and Compounds

Abstract:The structural evolution and magnetic property of Mn-rich clusters in GeMn thin films grown at 70°C by molecular beam epitaxy has been systematically investigated by TEM, EDS and SQUID. It was discovered that, by controlling the Mn concentration, the morphology of coherent Mn-rich clusters can be manipulated from tadpole to nanocolumn shapes. For a particular Mn concentration, the critical thickness to form coherent Mn-rich clusters at 70°C has been identified. Magnetic measurements show a complex magnetic behavior, which is mainly related to the Mn-rich clusters or precipitates. Our results also reveal that a flat surface of the Ge buffer layer plays an important role in producing vertically aligned tadpoles and nanocolumns.
Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

wang yong,zou jin,zhao zuoming,han xinhai,zhou xiaoyu,k l wang

DOI: https://doi.org/10.1063/1.2875110

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Mn behaviors in the Ge0.96Mn0.04 thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films grown on Ge, Mn has been found to be diffused toward to the surface during the thin film growth. When the Mn concentration is sufficiently high, Mn5Ge3 clusters may be formed. Further annealing of the high Mn concentrated thin film promotes the formation of alpha-Mn metallic clusters. We believe that all these extraordinary phenomena are attributed to Si as the substrate. (c) 2008 American Institute of Physics.
Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Ying Jiang,Yong Wang

DOI: https://doi.org/10.1155/2012/726921

IF: 2.0981

2012-01-01

Advances in Materials Science and Engineering

Abstract:Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.
Tadpole Shaped Ge0.96Mn0.04 Magnetic Semiconductors Grown on Si

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang,Ajey P. Jacob

DOI: https://doi.org/10.1063/1.3297880

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by transmission electron microscopy and superconducting quantum interference device. Tadpole shaped coherent GeMn clusters induced by spinodal decomposition were revealed in the film. Although these coherent clusters are dominant, Mn5Ge3 precipitates can be still detectable, contributing to a complex ferromagnetism. The Ge buffer layer, by relieving the misfit strain between Si and Ge, can significantly reduce the density of lattice defects in the subsequent GeMn layer. Our findings unveil a particular morphology of GeMn clusters, which would contribute to better understand the GeMn system.
Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Tianxiao Nie,Jianshi Tang,Kang L. Wang

DOI: https://doi.org/10.1016/j.jcrysgro.2015.01.025

IF: 1.8

2015-01-01

Journal of Crystal Growth

Abstract:In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1−x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.
Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Tianxiao Nie,Jianshi Tang,Xufeng Kou,Faxian Xiu,Kang L. Wang

DOI: https://doi.org/10.1016/b978-0-12-812136-8.00020-7

2018-01-01

Abstract:This chapter gives a systematic investigation of Mn thermal dynamics and kinetics in MnxGe1-x thin film growth. At high growth temperature, Mn preferred to agglomerate to form Mn5Ge3 intermetallic compound, whereas, the low growth temperature would induce Mn in the form of Mn-rich MnGe nanocolumn. Furthermore, through engineering of the strain in Ge space layer, MnGe/Ge superlattice can go through a structural transition from nanocolumn to nanodot, and finally to nanowell. To search for ideal diluted magnetic semiconductor (DMS) system, we focus our study on DMS nanostructures, including QDs, nanodisks and nanomeshes. Inside, not only high Tc (> 400 K) but also electric-field control of ferromagnetism can be realized. Based on this extraordinary property, a transpinor device is proposed, in which DMS nanostructures are used as the channel for collective spins switching controlled by gate voltage without need of current flow. And thus, it paves a new way for realizing low power-dissipation spin effect transistor.
Structural and Magnetic Properties of MBE-grown GeMnN_{2} Thin Films

M. Gajdardziska-Josifovska

DOI: https://doi.org/10.1103/physrevb.85.144113

2012-01-01

Abstract:Epitaxial GeMnN2 thin films are synthesized by plasma-assisted molecular beam epitaxy. Transmission electron microscopy and x-ray diffraction measurements confirm that it is the orthorhombic variant, consistent with the predictions of first-principles calculations. The magnetic properties of the films are related to defects, with samples grown under Ge-rich conditions exhibiting a net magnetic moment above room temperature. These results are explained by first-principles calculations, indicating that the preferential substitution of one magnetic sublattice of GeMnN2 by impurities and/or intrinsic defects such as Ge antisites produces a net magnetic moment in an antiferromagnetic background, and also introduces spin-polarized carriers near the Fermi level.
Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columns

Thibaut Devillers,Matthieu Jamet,André Barski,Valier Poydenot,Pascale Bayle-Guillemaud,Edith Bellet-Amalric,Salia Cherifi,Joël Cibert

DOI: https://doi.org/10.48550/arXiv.0705.0566

2007-05-04

Materials Science

Abstract:We report on the structural and magnetic properties of thin Ge(1-x)Mn(x)films grown by molecular beam epitaxy (MBE) on Ge(001) substrates at temperatures (Tg) ranging from 80deg C to 200deg C, with average Mn contents between 1 % and 11 %. Their crystalline structure, morphology and composition have been investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy and x-ray diffraction. In the whole range of growth temperatures and Mn concentrations, we observed the formation of manganese rich nanostructures embedded in a nearly pure germanium matrix. Growth temperature mostly determines the structural properties of Mn-rich nanostructures. For low growth temperatures (below 120deg C), we evidenced a two-dimensional spinodal decomposition resulting in the formation of vertical one-dimensional nanostructures (nanocolumns). Moreover we show in this paper the influence of growth parameters (Tg and Mn content) on this decomposition i.e. on nanocolumns size and density. For temperatures higher than 180deg C, we observed the formation of Ge3Mn5 clusters. For intermediate growth temperatures nanocolumns and nanoclusters coexist. Combining high resolution TEM and superconducting quantum interference device magnetometry, we could evidence at least four different magnetic phases in Ge(1-x)Mn(x) films: (i) paramagnetic diluted Mn atoms in the germanium matrix, (ii) superparamagnetic and ferromagnetic low-Tc nanocolumns (120 K < Tc < 170 K), (iii) high-Tc nanocolumns (Tc> 400 K) and (iv) Ge3Mn5 clusters.
Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Xie Zili,Zhang Rong,Cui Xugao,Tao Zhikuo,Xiu Xiangqian,Liu Bin,Li Yi,Fu Deyi,Song Lihong,Cui Yingchao,Han Ping,Shi Yi

2008-01-01

Abstract:The Ga1-xMnxN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low(<2.7%)Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.
Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO 2 :GeMn NCs/n-Si) grown by MBE

S. Amdouni,M. Aouassa,M. Bouaabdellaoui,A.K. Aladim,M. Yahyaoui

DOI: https://doi.org/10.1016/j.vacuum.2024.113191

IF: 4

2024-04-08

Vacuum

Abstract:This study examines the electrical and dielectric characteristics of magnetic GeMn nanocrystals integrated into a metal-insulator-semiconductor (MOS) configuration for optoelectronic applications. The nanocrystals were produced by solid-state dewetting of an amorphous GeMn layer deposited by MBE on SiO 2 /Si. The nanocrystals exhibit a well-defined hemispheric shape, high homogeneity, and with a Curie temperature higher than that of the ambient temperature. Characterizations by transmission electron microscopy (TEM) coupled with energy-dispersive X-ray spectroscopy (EDS) revealed the crystallinity of the nanocrystals and optimal incorporation of manganese in the nanocrystals, eliminating the usual diffusion or segregation anomalies observed during growth of GeMn alloy on silicon or germanium. Electrical and dielectric tests conducted via current-voltage and impedance spectroscopies on these structures confirmed the integrity of the oxide layer surrounding the GeMn nanocrystals from defects associated with the manganese. In addition, these measurements validated the proper functioning of the MOS structure as a MOS-type Schottky diode. The in-depth analysis of dielectric parameters, such as permittivity (ε), tangent δ , and electric modulus (M) as a function of frequency and bias voltage, revealed no anomalies, thus reinforcing the high quality of the MOS structure enclosing the GeMn nanocrystals. These results mark a significant advance in the growth and integration of magnetic semiconductor nanostructures for optoelectronic applications, paving the way for promising technological developments.

materials science, multidisciplinary,physics, applied
Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Masaaki Ogawa,Xinhai Han,Zuoming Zhao,Yong Wang,Kang L. Wang,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2008.12.013

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:Mn distribution behaviors and magnetic properties of the Ge0.96Mn0.04 films have been investigated. Different nominal amounts, 12 and 80 nm, of Ge0.96Mn0.04 were grown on Si (0 0 1) substrates at 250 degrees C using solid source molecular beam epitaxy. Electron energy loss spectroscopy (EELS) indicates that Mn diffuses toward the surface during the growth. The room-temperature ferromagnetism is observed for the as-grown and annealed films. Magnetic moment versus temperature curves are correlated with the structural properties. (c) 2008 Elsevier B.V. All rights reserved.
Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Masaaki Ogawa,Xinhai Han,Zuoming Zhao,Yong Wang,Kang L. Wang,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2008.12.013

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:Mn distribution behaviors and magnetic properties of the Ge0.96Mn0.04 films have been investigated. Different nominal amounts, 12 and 80 nm, of Ge0.96Mn0.04 were grown on Si (0 0 1) substrates at 250 degrees C using solid source molecular beam epitaxy. Electron energy loss spectroscopy (EELS) indicates that Mn diffuses toward the surface during the growth. The room-temperature ferromagnetism is observed for the as-grown and annealed films. Magnetic moment versus temperature curves are correlated with the structural properties. (c) 2008 Elsevier B.V. All rights reserved.
Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

Ya Wang,Zhiming Liao,Hongyi Xu,Faxian Xiu,Xufeng Kou,Yong Wang,Kang L Wang,John Drennan,Jin Zou

DOI: https://doi.org/10.1186/1556-276x-6-624

2011-01-01

Nanoscale Research Letters

Abstract:GeMn/Ge epitaxial 'superlattices' grown by molecular beam epitaxy with different growth conditions have been systematically investigated by transmission electron microscopy. It is revealed that periodic arrays of GeMn nanodots can be formed on Ge and GaAs substrates at low temperature (approximately 70°C) due to the matched lattice constants of Ge (5.656 Å) and GaAs (5.653 Å), while a periodic Ge/GeMn superlattice grown on Si showed disordered GeMn nanodots with a large amount of stacking faults, which can be explained by the fact that Ge and Si have a large lattice mismatch. Moreover, by varying growth conditions, the GeMn/Ge superlattices can be manipulated from having disordered GeMn nanodots to ordered coherent nanodots and then to ordered nanocolumns.PACS: 75.50.Pp; 61.72.-y; 66.30.Pa; 68.37.L.
GexSi1-x virtual-layer enhanced ferromagnetism in self-assembled Mn0.06Ge0.94 quantum dots grown on Si wafers by molecular beam epitaxy

Liming Wang,Yichi Zhang,Tao Liu,Zhi Zhang,Huiyong Hu,Jin Zou,Quanjie Jia,Zuimin Jiang

DOI: https://doi.org/10.1039/c9nr09315j

IF: 6.7

2020-01-01

Nanoscale

Abstract:Self-assembled Mn0.06Ge0.94 quantum dots (QDs) on a Si substrate or GexSi1-x virtual substrate (VS) were grown by molecular beam epitaxy. The GexSi1-x VS of different thicknesses and Ge compositions x were utilized to modulate the ferromagnetic properties of the above QDs. The MnGe QDs on GexSi1-x VS show a significantly enhanced ferromagnetism with a Curie temperature above 220 K. On the basis of the microstructural and magnetization results, the ferromagnetic properties of the QDs on GexSi1-x VS are believed to come from the intrinsic MnGe ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. At the same time, we found that by increasing the Ge composition x of GexSi1-x VS, the ferromagnetism of QDs grown on VS will markedly increase due to the improvements of hole concentration and Ge composition inside the QDs. These results are fundamentally important in the understanding and especially in the realization of high Curie temperature MnGe diluted magnetic semiconductors.
MnGe Magnetic Nanocolumns and Nanowells.

Faxian Xiu,Yong Wang,Kin Wong,Yi Zhou,Xufeng Kou,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1088/0957-4484/21/25/255602

IF: 3.5

2010-01-01

Nanotechnology

Abstract:We report a 'superlattice' growth method to produce well-aligned magnetic MnGe nanocolumns and nanowells by using low-temperature molecular-beam epitaxy. Both structural and magnetic properties show strong evidence of Mn(5)Ge(3) precipitates and lattice-coherent nanostructures with different blocking temperatures. Magnetotransport measurements reveal positive and negative magnetoresistances for the nanowells and nanocolumns, respectively. This distinction can be explained by different spin scattering mechanisms under magnetic fields. Our results suggest a new growth strategy to achieve reproducible MnGe nanostructures, which facilitates the development of Ge-based spintronics and magnetoelectronics devices.

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Magnetic Mn-Doped Ge Nanostructures

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Mnxge1-X Dilute Magnetic Semiconductor Studied by Xafs

Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Tadpole Shaped Ge0.96Mn0.04 Magnetic Semiconductors Grown on Si

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Structural and Magnetic Properties of MBE-grown GeMnN_{2} Thin Films

Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columns

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO 2 :GeMn NCs/n-Si) grown by MBE

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substrates

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (0 0 1) substrates

Structural Evolution of GeMn/Ge Superlattices Grown by Molecular Beam Epitaxy under Different Growth Conditions

Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub> virtual-layer enhanced ferromagnetism in self-assembled Mn<sub>0.06</sub>Ge<sub>0.94</sub> quantum dots grown on Si wafers by molecular beam epitaxy

MnGe Magnetic Nanocolumns and Nanowells.